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Title
Strain-induced changes to the electronic structure of germanium
Authors
Keywords
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Journal
JOURNAL OF PHYSICS-CONDENSED MATTER
Volume 24, Issue 19, Pages 195802
Publisher
IOP Publishing
Online
2012-04-18
DOI
10.1088/0953-8984/24/19/195802
References
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Related references
Note: Only part of the references are listed.- Diffusion of tin in germanium: A GGA+U approach
- (2011) H. Tahini et al. APPLIED PHYSICS LETTERS
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- (2011) Fei Ma et al. APPLIED PHYSICS LETTERS
- Diffusion of E centers in germanium predicted using GGA+U approach
- (2011) H. Tahini et al. APPLIED PHYSICS LETTERS
- Fluorine effect on As diffusion in Ge
- (2011) G. Impellizzeri et al. JOURNAL OF APPLIED PHYSICS
- Structure of Sn1−xGex random alloys as obtained from the coherent potential approximation
- (2011) J. J. Pulikkotil et al. JOURNAL OF APPLIED PHYSICS
- Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures
- (2011) F. Murphy-Armando et al. JOURNAL OF APPLIED PHYSICS
- Direct-bandgap light-emitting germanium in tensilely strained nanomembranes
- (2011) J. R. Sanchez-Perez et al. PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
- The role of La surface chemistry in the passivation of Ge
- (2010) A. Dimoulas et al. APPLIED PHYSICS LETTERS
- Control of direct band gap emission of bulk germanium by mechanical tensile strain
- (2010) M. El Kurdi et al. APPLIED PHYSICS LETTERS
- Dopant-vacancy cluster formation in germanium
- (2010) A. Chroneos JOURNAL OF APPLIED PHYSICS
- Enhanced photoluminescence of heavily n-doped germanium
- (2009) M. El Kurdi et al. APPLIED PHYSICS LETTERS
- Defect interactions in Sn1−xGex random alloys
- (2009) A. Chroneos et al. APPLIED PHYSICS LETTERS
- Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
- (2009) Xiaochen Sun et al. APPLIED PHYSICS LETTERS
- Enhanced direct bandgap emission in germanium by micromechanical strain engineering
- (2009) Peng Huei Lim et al. OPTICS EXPRESS
- Onsite matrix elements of the tight-binding Hamiltonian of a strained crystal: Application to silicon, germanium, and their alloys
- (2009) Y. M. Niquet et al. PHYSICAL REVIEW B
- Strain-modulated electronic properties of Ge nanowires: A first-principles study
- (2009) Paul Logan et al. PHYSICAL REVIEW B
- Prediction that Uniaxial Tension along⟨111⟩Produces a Direct Band Gap in Germanium
- (2009) Feng Zhang et al. PHYSICAL REVIEW LETTERS
- Vacancy-mediated dopant diffusion activation enthalpies for germanium
- (2008) A. Chroneos et al. APPLIED PHYSICS LETTERS
- Charge states of vacancies in germanium investigated by simultaneous observation of germanium self-diffusion and arsenic diffusion
- (2008) Miki Naganawa et al. APPLIED PHYSICS LETTERS
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