Structure of Sn1−xGex random alloys as obtained from the coherent potential approximation

Tin-vacancy complex in germanium

(2011) V. P. Markevich et al.   JOURNAL OF APPLIED PHYSICS

Special quasirandom structures for binary/ternary group IV random alloys

(2010) A. Chroneos et al.   CHEMICAL PHYSICS LETTERS

Dopant-vacancy cluster formation in germanium

(2010) A. Chroneos   JOURNAL OF APPLIED PHYSICS

High-level incorporation of antimony in germanium by laser annealing

(2010) E. Bruno et al.   JOURNAL OF APPLIED PHYSICS

Thermal expansivity ofGe1−ySnyalloys

(2010) R. Roucka et al.   PHYSICAL REVIEW B

Deviations from Vegard’s law in ternary III-V alloys

(2010) S. T. Murphy et al.   PHYSICAL REVIEW B

Ab InitioDescription of DisorderedSr1−xKxFe2As2Using the Coherent Potential Approximation

(2010) Jiji J. Pulikkotil et al.   PHYSICAL REVIEW LETTERS

E centers in ternary Si1−x−yGexSny random alloys

(2009) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Defect interactions in Sn1−xGex random alloys

(2009) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Morphology and defect properties of the Ge–GeO2 interface

(2009) L. Tsetseris et al.   APPLIED PHYSICS LETTERS

Impact of germanium on vacancy clustering in germanium-doped silicon

(2009) A. Chroneos et al.   JOURNAL OF APPLIED PHYSICS

Intrinsic and extrinsic diffusion of indium in germanium

(2009) R. Kube et al.   JOURNAL OF APPLIED PHYSICS

Mechanism of B diffusion in crystalline Ge under proton irradiation

(2009) E. Bruno et al.   PHYSICAL REVIEW B

Low temperature growth of Ge1−xSnx buffer layers for tensile–strained Ge layers

(2009) Yosuke Shimura et al.   THIN SOLID FILMS

Vacancy-mediated dopant diffusion activation enthalpies for germanium

(2008) A. Chroneos et al.   APPLIED PHYSICS LETTERS

Phosphorous clustering in germanium-rich silicon germanium

(2008) A. Chroneos et al.   Materials Science and Engineering B-Advanced Functional Solid-State Materials

Nonlinear stability ofEcenters inSi1−xGex: Electronic structure calculations

(2008) A. Chroneos et al.   PHYSICAL REVIEW B