Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures

Flexible Germanium Nanowires: Ideal Strength, Room Temperature Plasticity, and Bendable Semiconductor Fabric

(2010) Damon A. Smith et al.   ACS Nano

Ge-on-Si laser operating at room temperature

(2010) Jifeng Liu et al.   OPTICS LETTERS

ABINIT: First-principles approach to material and nanosystem properties

(2009) X. Gonze et al.   COMPUTER PHYSICS COMMUNICATIONS

Growth and Characterization of Highly Tensile-Strained Ge on InxGa1-xAs Virtual Substrate by Solid Source Molecular Beam Epitaxy

(2009) Yutaka Hoshina et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

First-Principles Analysis of Indirect-to-Direct Band Gap Transition of Ge under Tensile Strain

(2009) Yutaka Hoshina et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Prediction that Uniaxial Tension along⟨111⟩Produces a Direct Band Gap in Germanium

(2009) Feng Zhang et al.   PHYSICAL REVIEW LETTERS

First-principles calculation of carrier-phonon scattering inn-typeSi1−xGexalloys

(2008) F. Murphy-Armando et al.   PHYSICAL REVIEW B