Rigorous theory of the radiative and gain characteristics of silicon and germanium lasing media
Published 2015 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Rigorous theory of the radiative and gain characteristics of silicon and germanium lasing media
Authors
Keywords
-
Journal
PHYSICAL REVIEW B
Volume 91, Issue 3, Pages -
Publisher
American Physical Society (APS)
Online
2015-01-15
DOI
10.1103/physrevb.91.035307
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Near-infrared free carrier absorption in heavily doped silicon
- (2014) Simeon C. Baker-Finch et al. JOURNAL OF APPLIED PHYSICS
- Numerical Analysis of Radiative Recombination in Narrow-Gap Semiconductors Using the Green’s Function Formalism
- (2014) Hanqing Wen et al. JOURNAL OF ELECTRONIC MATERIALS
- Spectral Characteristics of Hot Electron Electroluminescence in Silicon Avalanching Junctions
- (2013) Monuko du Plessis et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Strain analysis in SiN/Ge microstructures obtained via Si-complementary metal oxide semiconductor compatible approach
- (2013) G. Capellini et al. JOURNAL OF APPLIED PHYSICS
- Quasiparticle semiconductor band structures including spin–orbit interactions
- (2013) Brad D Malone et al. JOURNAL OF PHYSICS-CONDENSED MATTER
- Analysis of enhanced light emission from highly strained germanium microbridges
- (2013) M. J. Süess et al. Nature Photonics
- Radiative recombination and optical gain spectra in biaxially strainedn-type germanium
- (2013) M. Virgilio et al. PHYSICAL REVIEW B
- Recent advances in germanium emission [Invited]
- (2013) P. Boucaud et al. Photonics Research
- Numerical analysis of indirect Auger transitions in InGaN
- (2012) Francesco Bertazzi et al. APPLIED PHYSICS LETTERS
- Optimum strain configurations for carrier injection in near infrared Ge lasers
- (2012) O. Aldaghri et al. JOURNAL OF APPLIED PHYSICS
- Mid- to long-wavelength infrared plasmonic-photonics using heavily doped n-Ge/Ge and n-GeSn/GeSn heterostructures
- (2012) Richard Soref et al. OPTICS EXPRESS
- Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain
- (2012) Lee Carroll et al. PHYSICAL REVIEW LETTERS
- Tensilely Strained Germanium Nanomembranes as Infrared Optical Gain Media
- (2012) C. Boztug et al. Small
- Roadmap to an Efficient Germanium-on-Silicon Laser: Strain vs. n-Type Doping
- (2012) Birendra Dutt et al. IEEE Photonics Journal
- Control of direct band gap emission of bulk germanium by mechanical tensile strain
- (2010) M. El Kurdi et al. APPLIED PHYSICS LETTERS
- Electronic band structure calculations for biaxially strained Si, Ge, and III–V semiconductors
- (2010) Jiseok Kim et al. JOURNAL OF APPLIED PHYSICS
- Recent progress in lasers on silicon
- (2010) Di Liang et al. Nature Photonics
- Ge-on-Si laser operating at room temperature
- (2010) Jifeng Liu et al. OPTICS LETTERS
- Theory of high field carrier transport and impact ionization in wurtzite GaN. Part I: A full band Monte Carlo model
- (2009) Francesco Bertazzi et al. JOURNAL OF APPLIED PHYSICS
- Self-consistent T-matrix theory of semiconductor light-absorption and luminescence
- (2009) N. H. Kwong et al. PHYSICAL REVIEW B
Publish scientific posters with Peeref
Peeref publishes scientific posters from all research disciplines. Our Diamond Open Access policy means free access to content and no publication fees for authors.
Learn MoreCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now