Influence of Weight Ratio of Poly(4-vinylphenol) Insulator on Electronic Properties of InGaZnO Thin-Film Transistor

Erratum: “High performance InGaZnO thin-film transistors with high-k amorphous Ba0.5Sr0.5TiO3 gate insulator” [Appl. Phys. Lett. 93, 242111 (2008)]

(2009) J. B. Kim et al.   APPLIED PHYSICS LETTERS

Low-voltage InGaZnO thin-film transistors with Al2O3 gate insulator grown by atomic layer deposition

(2009) J. B. Kim et al.   APPLIED PHYSICS LETTERS

Flexible High-Performance Amorphous InGaZnO4Thin-Film Transistors Utilizing Excimer Laser Annealing

(2009) Mitsuru Nakata et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Temperature-Dependent Transfer Characteristics of Amorphous InGaZnO4Thin-Film Transistors

(2009) Kazushige Takechi et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Evaluation of Y2O3 gate insulators for a-IGZO thin film transistors

(2009) Young-Je Cho et al.   THIN SOLID FILMS

Al2O3buffer in a ZnO thin film transistor with poly-4-vinylphenol dielectric

(2008) Seokhwan Bang et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY