The Effect of Growth Pressure and Growth Rate on the Properties of Mg-Doped GaN

出版年份 2014 全文链接

标题

作者

关键词

<em class=EmphasisTypeItalic >p</em>-GaN, Mg doping, adatom surface mobility, Mg incorporation ability, growth rate, growth pressure, MOCVD, GaN

出版物

Volume 43, Issue 4, Pages 1244-1248

出版商

Springer Nature

发表日期

2014-01-22

DOI

10.1007/s11664-014-3005-9

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