Characterization of ALD Beryllium Oxide as a Potential High-k Gate Dielectric for Low-Leakage AlGaN/GaN MOSHEMTs

CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon

(2012) Marleen Van Hove et al.   IEEE ELECTRON DEVICE LETTERS

Band offset measurements of the GaN/dielectric interfaces

(2012) Mary R. Coan et al.   JOURNAL OF APPLIED PHYSICS

Direct current performance and current collapse in AlGaN/GaN insulated gate high-electron mobility transistors on Si (1 1 1) substrate with very thin SiO2gate dielectric

(2012) M Lachab et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Assessment of GaN Surface Pretreatment for Atomic Layer Deposited High-kDielectrics

(2011) Neeraj Nepal et al.   Applied Physics Express

300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

(2011) Dong Seup Lee et al.   IEEE ELECTRON DEVICE LETTERS

1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

(2011) Rongming Chu et al.   IEEE ELECTRON DEVICE LETTERS

Epitaxial ALD BeO: Efficient Oxygen Diffusion Barrier for EOT Scaling and Reliability Improvement

(2011) Jung Hwan Yum et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Atomic layer deposited beryllium oxide: Effective passivation layer for III-V metal/oxide/semiconductor devices

(2011) J. H. Yum et al.   JOURNAL OF APPLIED PHYSICS

A study of highly crystalline novel beryllium oxide film using atomic layer deposition

(2011) J.H. Yum et al.   JOURNAL OF CRYSTAL GROWTH

Comparison of the self-cleaning effects and electrical characteristics of BeO and Al2O3 deposited as an interface passivation layer on GaAs MOS devices

(2011) J. H. Yum et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

In-situ X-ray photoelectron spectroscopy of trimethyl aluminum and water half-cycle treatments on HF-treated and O3-oxidized GaN substrates

(2011) Prasanna Sivasubramani et al.   Physica Status Solidi-Rapid Research Letters

Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs

(2011) A Malmros et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

The significance of core-level electron binding energies on the proper analysis of InGaAs interfacial bonding

(2009) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition

(2008) Yuanzheng Yue et al.   IEEE ELECTRON DEVICE LETTERS