Physical origins and suppression of Ag dissolution in GeSx-based ECM cells
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Physical origins and suppression of Ag dissolution in GeSx-based ECM cells
Authors
Keywords
-
Journal
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 16, Issue 34, Pages 18217
Publisher
Royal Society of Chemistry (RSC)
Online
2014-07-10
DOI
10.1039/c4cp01759e
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- Total Ionizing Dose Retention Capability of Conductive Bridging Random Access Memory
- (2014) Yago Gonzalez-Velo et al. IEEE ELECTRON DEVICE LETTERS
- Influence of Carbon Alloying on the Thermal Stability and Resistive Switching Behavior of Copper-Telluride Based CBRAM Cells
- (2013) Wouter Devulder et al. ACS Applied Materials & Interfaces
- Cation-based resistance change memory
- (2013) Ilia Valov et al. JOURNAL OF PHYSICS D-APPLIED PHYSICS
- Bipolar switching polarity reversal by electrolyte layer sequence in electrochemical metallization cells with dual-layer solid electrolytes
- (2013) Rohit Soni et al. Nanoscale
- Analytical analysis of the generic SET and RESET characteristics of electrochemical metallization memory cells
- (2013) Stephan Menzel et al. Nanoscale
- Switching kinetics of electrochemical metallization memory cells
- (2013) Stephan Menzel et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- Nanobatteries in redox-based resistive switches require extension of memristor theory
- (2013) I. Valov et al. Nature Communications
- Ag/GeS x /Pt-based complementary resistive switches for hybrid CMOS/Nanoelectronic logic and memory architectures
- (2013) Jan van den Hurk et al. Scientific Reports
- Redox-Based Resistive Switching Memories (ReRAMs): Electrochemical Systems at the Atomic Scale
- (2013) Ilia Valov ChemElectroChem
- Direct Observation of Charge Transfer in Solid Electrolyte for Electrochemical Metallization Memory
- (2012) Deok-Yong Cho et al. ADVANCED MATERIALS
- Quantized Conductance in $\hbox{Ag/GeS}_{2}/\hbox{W}$ Conductive-Bridge Memory Cells
- (2012) John R. Jameson et al. IEEE ELECTRON DEVICE LETTERS
- An electron conduction model of resistive memory for resistance dispersion, fluctuation, filament structures, and Set/Reset mechanism
- (2012) Masayoshi Sasaki JOURNAL OF APPLIED PHYSICS
- Simulation of multilevel switching in electrochemical metallization memory cells
- (2012) Stephan Menzel et al. JOURNAL OF APPLIED PHYSICS
- Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories
- (2012) I. Valov et al. JOURNAL OF SOLID STATE ELECTROCHEMISTRY
- Electrochemical Deposition of Germanium Sulfide from Room-Temperature Ionic Liquids and Subsequent Ag Doping in an Aqueous Solution
- (2012) Sankaran Murugesan et al. LANGMUIR
- Quantum conductance and switching kinetics of AgI-based microcrossbar cells
- (2012) S Tappertzhofen et al. NANOTECHNOLOGY
- Atomically controlled electrochemical nucleation at superionic solid electrolyte surfaces
- (2012) Ilia Valov et al. NATURE MATERIALS
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Thermal-stability optimization of Al2O3/Cu–Te based conductive-bridging random access memory systems
- (2012) L. Goux et al. THIN SOLID FILMS
- Preparation and characterization of GeSx thin-films for resistive switching memories
- (2012) Jan van den Hurk et al. THIN SOLID FILMS
Find the ideal target journal for your manuscript
Explore over 38,000 international journals covering a vast array of academic fields.
SearchCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now