Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
出版年份 2018 全文链接
标题
Vertical leakage mechanism in GaN on Si high electron mobility transistor buffer layers
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 124, Issue 5, Pages 055702
出版商
AIP Publishing
发表日期
2018-08-04
DOI
10.1063/1.5027680
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Electric Field Reduction in C-Doped AlGaN/GaN on Si High Electron Mobility Transistors
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