Stimulated emission and optical gain in AlGaN heterostructures grown on bulk AlN substrates

Performance and Reliability of Deep-Ultraviolet Light-Emitting Diodes Fabricated on AlN Substrates Prepared by Hydride Vapor Phase Epitaxy

(2013) Toru Kinoshita et al.   Applied Physics Express

Determination of gain in AlGaN cladding free nitride laser diodes

(2013) G. Muziol et al.   APPLIED PHYSICS LETTERS

Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures

(2013) Jinqiao Xie et al.   APPLIED PHYSICS LETTERS

Sub-250 nm room-temperature optical gain from AlGaN/AlN multiple quantum wells with strong band-structure potential fluctuations

(2012) Emanuele Francesco Pecora et al.   APPLIED PHYSICS LETTERS

Stimulated emission in AlGaN/AlGaN quantum wells with different Al content

(2012) J. Mickevičius et al.   APPLIED PHYSICS LETTERS

Influence of high temperature AlN buffer on optical gain in AlGaN/AlGaN multiple quantum well structures

(2011) Y. P. Gong et al.   APPLIED PHYSICS LETTERS

Growth and Characterization of AlN and AlGaN Epitaxial Films on AlN Single Crystal Substrates

(2011) R. Dalmau et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Sharp bound and free exciton lines from homoepitaxial AlN

(2011) Martin Feneberg et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Theoretical investigation of optical polarization properties in Al-rich AlGaN quantum wells with various substrate orientations

(2010) A. Atsushi Yamaguchi   APPLIED PHYSICS LETTERS

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

(2010) Jing Zhang et al.   APPLIED PHYSICS LETTERS

Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition

(2010) A. Rice et al.   JOURNAL OF APPLIED PHYSICS

Growth of AlN single crystalline boules

(2010) Z.G. Herro et al.   JOURNAL OF CRYSTAL GROWTH

Confinement factor and absorption loss of AlInGaN based laser diodes emitting from ultraviolet to green

(2009) L. Q. Zhang et al.   JOURNAL OF APPLIED PHYSICS

Seeded growth of AlN bulk crystals in m- and c-orientation

(2009) P. Lu et al.   JOURNAL OF CRYSTAL GROWTH

High-performance UV emitter grown on high-crystalline-quality AlGaN underlying layer

(2009) Hirotoshi Tsuzuki et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

222-282 nm AlGaN and InAlGaN-based deep-UV LEDs fabricated on high-quality AlN on sapphire

(2009) Hideki Hirayama et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Demonstration of an ultraviolet 336 nm AlGaN multiple-quantum-well laser diode

(2008) Harumasa Yoshida et al.   APPLIED PHYSICS LETTERS