Journal
SOLID STATE COMMUNICATIONS
Volume 152, Issue 10, Pages 835-838Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.ssc.2012.02.023
Keywords
Polydimethylsiloxane; Gold nanoparticles; Negative differential resistance; Charge trapping
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Metal-insulator-metal (MIM) devices play an important role in information storage cells. In this research, a MIM with an insulator made from polydimethylsiloxane blended with gold nanoparticles has been investigated. The current-voltage characteristic demonstrates a negative differential resistance (NOR) and memory effect. This article attempts to explain the NDR and memory effect, using the charge trapping and releasing mechanisms of the gold nanoparticles and also electron tunneling mechanisms. (C) 2012 Elsevier Ltd. All rights reserved.
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