Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices

Highly Uniform Resistive Switching Properties of Amorphous InGaZnO Thin Films Prepared by a Low Temperature Photochemical Solution Deposition Method

(2014) Wei Hu et al.   ACS Applied Materials & Interfaces

Realization of write-once-read-many-times memory device with O2 plasma-treated indium gallium zinc oxide thin film

(2014) P. Liu et al.   APPLIED PHYSICS LETTERS

A Versatile Light-Switchable Nanorod Memory: Wurtzite ZnO on Perovskite SrTiO3

(2013) Ashok Bera et al.   ADVANCED FUNCTIONAL MATERIALS

Beyond the barrier

(2013) E. Y. Tsymbal et al.   NATURE MATERIALS

Electrically induced colossal capacitance enhancement in LaAlO3/SrTiO3 heterostructures

(2013) Shuxiang Wu et al.   NPG Asia Materials

Nonvolatile Resistive Switching inPt/LaAlO3/SrTiO3Heterostructures

(2013) Shuxiang Wu et al.   Physical Review X

Symmetrical Negative Differential Resistance Behavior of a Resistive Switching Device

(2012) Yuanmin Du et al.   ACS Nano

Single Polymer-Based Ternary Electronic Memory Material and Device

(2012) Shu-Juan Liu et al.   ADVANCED MATERIALS

Nonvolatile organic write-once-read-many-times memory devices based on hexadecafluoro-copper-phthalocyanine

(2012) Lidan Wang et al.   APPLIED PHYSICS LETTERS

High sensitivity low field magnetically gated resistive switching in CoFe2O4/La0.66Sr0.34MnO3 heterostructure

(2012) Vishal Thakare et al.   APPLIED PHYSICS LETTERS

Formation of SiGe nanocrystals embedded in Al2O3 for the application of write-once-read-many-times memory

(2012) Min-Lin Wu et al.   APPLIED PHYSICS LETTERS

Impact of Nitrogen Doping on Electrical Conduction in Anatase TiO2 Thin Films

(2012) Y. P. Yu et al.   Journal of Physical Chemistry C

Switchable Induced Polarization in LaAlO3/SrTiO3 Heterostructures

(2012) C. W. Bark et al.   NANO LETTERS

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

(2012) Hai Yang Peng et al.   Scientific Reports

Memory effects and carrier transport mechanisms of write-once- read-many-times memory devices fabricated using poly(3-hexylthiophene) molecules embedded in a polymethylmethacrylate layer on a flexible substrate

(2011) Keun Kab Park et al.   APPLIED PHYSICS LETTERS

Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation

(2011) Yi Wu et al.   JOURNAL OF APPLIED PHYSICS

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Low-power write-once-read-many-times memory devices

(2010) Jianpu Wang et al.   APPLIED PHYSICS LETTERS

Characteristics of high-k Al2O3 dielectric using ozone-based atomic layer deposition for dual-gated graphene devices

(2010) B. Lee et al.   APPLIED PHYSICS LETTERS

$\hbox{ZrO}_{2}$-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application

(2010) Qingyun Zuo et al.   IEEE ELECTRON DEVICE LETTERS

Memory grows up

(2010) Agostino Pirovano et al.   Nature Nanotechnology

Atomic structure of conducting nanofilaments in TiO2 resistive switching memory

(2010) Deok-Hwang Kwon et al.   Nature Nanotechnology

Impact of Defect Distribution on Resistive Switching Characteristics of Sr2TiO4Thin Films

(2009) Keisuke Shibuya et al.   ADVANCED MATERIALS

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

(2009) Seyoung Kim et al.   APPLIED PHYSICS LETTERS

High-Performance Programmable Memory Devices Based on Hyperbranched Copper Phthalocyanine Polymer Thin Films

(2008) Seungchel Choi et al.   ADVANCED MATERIALS

Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing

(2008) Jian Lin et al.   APPLIED PHYSICS LETTERS

The missing memristor found

(2008) Dmitri B. Strukov et al.   NATURE

Memristive switching mechanism for metal/oxide/metal nanodevices

(2008) J. Joshua Yang et al.   Nature Nanotechnology

MATERIALS SCIENCE: Who Wins the Nonvolatile Memory Race?

(2008) G. I. Meijer   SCIENCE