标题
Write-once-read-many-times characteristics of Pt/Al2O3/ITO memory devices
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 116, Issue 7, Pages 074515
出版商
AIP Publishing
发表日期
2014-08-21
DOI
10.1063/1.4893660
参考文献
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