Investigation of the impact of insulator material on the performance of dissimilar electrode metal-insulator-metal diodes

High-Performance Metal-Insulator-Metal Tunnel Diode Selectors

(2014) Bogdan Govoreanu et al.   IEEE ELECTRON DEVICE LETTERS

Emerging Applications for High K Materials in VLSI Technology

(2014) Robert Clark   Materials

Step tunneling enhanced asymmetry in asymmetric electrode metal-insulator-insulator-metal tunnel diodes

(2013) N. Alimardani et al.   APPLIED PHYSICS LETTERS

Detection of defect states in low-k dielectrics using reflection electron energy loss spectroscopy

(2013) S.W. King et al.   JOURNAL OF APPLIED PHYSICS

Electrical conductivity in oxygen-deficient phases of tantalum pentoxide from first-principles calculations

(2013) Robert J. Bondi et al.   JOURNAL OF APPLIED PHYSICS

Crystallinity of inorganic films grown by atomic layer deposition: Overview and general trends

(2013) Ville Miikkulainen et al.   JOURNAL OF APPLIED PHYSICS

Detection of surface electronic defect states in low and high-k dielectrics using reflection electron energy loss spectroscopy

(2013) Benjamin L. French et al.   JOURNAL OF MATERIALS RESEARCH

Conduction processes in metal–insulator–metal diodes with Ta2O5 and Nb2O5 insulators deposited by atomic layer deposition

(2013) Nasir Alimardani et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

A Graphene-Based Hot Electron Transistor

(2013) Sam Vaziri et al.   NANO LETTERS

Vertical Graphene-Base Hot-Electron Transistor

(2013) Caifu Zeng et al.   NANO LETTERS

Influence of growth and annealing temperatures on the electrical properties of Nb2O5-based MIM capacitors

(2013) H García et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Observation of resonant tunneling phenomenon in metal-insulator-insulator-insulator-metal electron tunnel devices

(2012) P. Maraghechi et al.   APPLIED PHYSICS LETTERS

High aspect ratio and high breakdown strength metal-oxide capacitors

(2012) T. Usui et al.   APPLIED PHYSICS LETTERS

Enhancing Electron-Emission Efficiency of MIM Tunneling Cathodes by Reducing Insulator Trap Density

(2012) Mutsumi Suzuki et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Fabrication and Characterization of MIM Diodes Based on Nb/Nb2O5 Via a Rapid Screening Technique

(2011) Prakash Periasamy et al.   ADVANCED MATERIALS

Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor

(2011) Feng Miao et al.   ADVANCED MATERIALS

Conduction mechanism of TiN/HfOx/Pt resistive switching memory: A trap-assisted-tunneling model

(2011) Shimeng Yu et al.   APPLIED PHYSICS LETTERS

An Interactive Simulation Tool for Complex Multilayer Dielectric Devices

(2011) R G Southwick et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

A Focused Asymmetric Metal–Insulator–Metal Tunneling Diode: Fabrication, DC Characteristics and RF Rectification Analysis

(2011) Kwangsik Choi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

(2011) Shankar Swaminathan et al.   JOURNAL OF APPLIED PHYSICS

Impact of electrode roughness on metal-insulator-metal tunnel diodes with atomic layer deposited Al2O3 tunnel barriers

(2011) Nasir Alimardani et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A

Advancing MIM Electronics: Amorphous Metal Electrodes

(2010) E. William Cowell et al.   ADVANCED MATERIALS

Defect conduction bands, localization, and temperature-dependent electron emission from Al–Al2O3–Au diodes

(2010) T. W. Hickmott   JOURNAL OF APPLIED PHYSICS

Low temperature silicon dioxide by thermal atomic layer deposition: Investigation of material properties

(2010) D. Hiller et al.   JOURNAL OF APPLIED PHYSICS

Atomic layer deposited high-k nanolaminate capacitors

(2010) S.W. Smith et al.   SOLID-STATE ELECTRONICS

Reliability Challenges for CMOS Technology Qualifications With Hafnium Oxide/Titanium Nitride Gate Stacks

(2009) A. Kerber et al.   IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY

Pulse-induced low-power resistive switching in HfO2 metal-insulator-metal diodes for nonvolatile memory applications

(2009) Ch. Walczyk et al.   JOURNAL OF APPLIED PHYSICS

Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures

(2009) S. Monaghan et al.   SOLID-STATE ELECTRONICS