Role of ultra thin pseudomorphic InP layer to improve the high-k dielectric/GaAs interface in realizing metal-oxide-semiconductor capacitor

GaAs metal–oxide–semiconductor device with titanium dioxide as dielectric layer: effect of oxide thickness on the device performance

(2011) Souvik Kundu et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2–GaAs metal–oxide–semiconductor devices

(2011) Souvik Kundu et al.   SOLID STATE COMMUNICATIONS

HfO2–GaAs metal-oxide-semiconductor capacitor using dimethylaluminumhydride-derived aluminum oxynitride interfacial passivation layer

(2010) G. He et al.   APPLIED PHYSICS LETTERS

MOS capacitors with metal gate/high-k dielectrics on GaAs bulk substrate

(2010) V. Budhraja et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Comparison of n-type and p-type GaAs oxide growth and its effects on frequency dispersion characteristics

(2008) C. L. Hinkle et al.   APPLIED PHYSICS LETTERS

Capacitance-voltage characterization of GaAs–Al2O3 interfaces

(2008) G. Brammertz et al.   APPLIED PHYSICS LETTERS

Characterization of sputtered TiO2 gate dielectric on aluminum oxynitride passivated p-GaAs

(2008) Goutam Kumar Dalapati et al.   JOURNAL OF APPLIED PHYSICS