标题
Vacancy-type defects in InxGa1–xN alloys probed using a monoenergetic positron beam
作者
关键词
-
出版物
JOURNAL OF APPLIED PHYSICS
Volume 112, Issue 1, Pages 014507
出版商
AIP Publishing
发表日期
2012-07-07
DOI
10.1063/1.4732141
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy
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- GaInN-Based Solar Cells Using Strained-Layer GaInN/GaInN Superlattice Active Layer on a Freestanding GaN Substrate
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- Vacancy-type defects in Mg-doped InN probed by means of positron annihilation
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- Vacancy-oxygen complexes and their optical properties in AlN epitaxial films studied by positron annihilation
- (2009) A. Uedono et al. JOURNAL OF APPLIED PHYSICS
- First principles studies on In-related nitride semiconductors
- (2009) Teruaki Obata et al. JOURNAL OF CRYSTAL GROWTH
- Point defects in group-III nitride semiconductors studied by positron annihilation
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- High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap
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- Vacancy-type defects in Er-doped GaN studied by a monoenergetic positron beam
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- Evidence of compositional inhomogeneity in In[sub x]Ga[sub 1−x]N alloys using ultraviolet and visible Raman spectroscopy.
- (2008) Ayan Kar et al. JOURNAL OF APPLIED PHYSICS
- Nitrogen vacancies in InN: Vacancy clustering and metallic bonding from first principles
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