Effects of thermal annealing on the band alignment of lanthanum aluminate on silicon investigated by x-ray photoelectron spectroscopy

Origin of electric dipoles formed at high-k/SiO2 interface

(2009) Koji Kita et al.   APPLIED PHYSICS LETTERS

X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy investigation of Al-related dipole at the HfO2/Si interface

(2009) L. Q. Zhu et al.   JOURNAL OF APPLIED PHYSICS

First principles investigation of defect energy levels at semiconductor-oxide interfaces: Oxygen vacancies and hydrogen interstitials in the Si–SiO2–HfO2 stack

(2009) Peter Broqvist et al.   JOURNAL OF APPLIED PHYSICS

Change in band alignment of HfO[sub 2] films with annealing treatments

(2008) C. J. Yim et al.   APPLIED PHYSICS LETTERS

Band bending measurement of HfO2/SiO2/Si capacitor with ultra-thin La2O3 insertion by XPS

(2008) K. Kakushima et al.   APPLIED SURFACE SCIENCE

Thermal Annealing Effects on the Atomic Layer Deposited LaAlO[sub 3] Thin Films on Si Substrate

(2008) Dail Eom et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Effects of annealing on the valence band offsets between hafnium aluminate and silicon

(2008) S. Y. Chiam et al.   JOURNAL OF APPLIED PHYSICS

Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement

(2008) K. Kakushima et al.   JOURNAL OF APPLIED PHYSICS

Effects of aluminum incorporation on band alignment at theSiO2∕HfO2interface

(2008) Onise Sharia et al.   PHYSICAL REVIEW B