The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)

Title
The critical role of growth temperature on the structural and electrical properties of AlGaN/GaN high electron mobility transistor heterostructures grown on Si(111)
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 105, Issue 3, Pages 033701
Publisher
AIP Publishing
Online
2009-02-03
DOI
10.1063/1.3063698

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