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JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.49.04DD17
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A complementary metal oxide semiconductor (CMOS)-compatible WOx based resistive memory has been developed. The WOx memory layer is made from rapid thermal oxidation of W plugs. The device performs excellent electrical properties. The switching speed is extremely fast (similar to 2 ns) and the programming voltage (< 1: 4 V) is low. For single-level cell (SLC) operation, the device shows a large resistance window, and 10(8)-cycle endurance. For multi-level cell (MLC) operation, it demonstrates 2-bit/cell storage with the endurance up to 10000 times. The rapid thermal oxidation (RTO) WOx resistance random access memory (RRAM) is very promising for both high-density and embedded memory applications. (C) 2010 The Japan Society of Applied Physics
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