Intelligent Ultraviolet Sensor Composed of GaN-Based Photodiode and N-Channel Metal Oxide Semiconductor Si-Charge Transfer Type Signal Processor

Atom probe analysis of interfacial abruptness and clustering within a single InxGa1−xN quantum well device on semipolar (101¯1¯) GaN substrate

(2011) T. J. Prosa et al.   APPLIED PHYSICS LETTERS

Large optical gain AlGaN-delta-GaN quantum wells laser active regions in mid- and deep-ultraviolet spectral regimes

(2011) Jing Zhang et al.   APPLIED PHYSICS LETTERS

Extremely high internal quantum efficiencies from AlGaN/AlN quantum wells emitting in the deep ultraviolet spectral region

(2011) Ryan G. Banal et al.   APPLIED PHYSICS LETTERS

Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes

(2011) Hongping Zhao et al.   APPLIED PHYSICS LETTERS

Monolithic Integration of Ultrafast Photodetector and MESFET in the GaN Material System

(2011) M. Mikulics et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Separation of Thin GaN from Sapphire by Laser Lift-Off Technique

(2011) Tetsuzo Ueda et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Integration of Micro-Light-Emitting-Diode Arrays and Silicon Driver for Heterogeneous Optoelectronic Integrated Circuit Device

(2011) Sang-Baie Shin et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

High-temperature characteristics of Seebeck coefficients for AlInN alloys grown by metalorganic vapor phase epitaxy

(2011) Jing Zhang et al.   JOURNAL OF APPLIED PHYSICS

Growth study and impurity characterization of AlxIn1−xN grown by metal organic chemical vapor deposition

(2011) Roy B. Chung et al.   JOURNAL OF CRYSTAL GROWTH

Low-frequency noise in SOI pseudo-MOSFET with pressure probes

(2011) A. El Hajj Diab et al.   MICROELECTRONIC ENGINEERING

High-performance GaN metal–insulator–semiconductor ultraviolet photodetectors using gallium oxide as gate layer

(2011) Ming-Lun Lee et al.   OPTICS EXPRESS

Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

(2011) Hongping Zhao et al.   OPTICS EXPRESS

Operation of Monolithically-Integrated Digital Circuits with Light Emitting Diodes Fabricated in Lattice-Matched Si/III–V–N/Si Heterostructure

(2010) Keisuke Yamane et al.   Applied Physics Express

Effect of crystal-field split-off hole and heavy-hole bands crossover on gain characteristics of high Al-content AlGaN quantum well lasers

(2010) Jing Zhang et al.   APPLIED PHYSICS LETTERS

A High-Responsivity GaN Nanowire UV Photodetector

(2010) W. Y. Weng et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Seamless On-Wafer Integration of Si(100) MOSFETs and GaN HEMTs

(2009) J.W. Chung et al.   IEEE ELECTRON DEVICE LETTERS

Low-Dark-Current High-Performance AlGaN Solar-Blind p–i–n Photodiodes

(2008) Hao Jiang et al.   JAPANESE JOURNAL OF APPLIED PHYSICS