Performances of Strained Nanowire Devices: Ballistic Versus Scattering-Limited Currents

Performance of Omega-Shaped-Gate Silicon Nanowire MOSFET With Diameter Down to 8 nm

(2012) S. Barraud et al.   IEEE ELECTRON DEVICE LETTERS

Fully Atomistic Simulations of Phonon-Limited Mobility of Electrons and Holes in $\langle \hbox{001}\rangle$-, $\langle \hbox{110}\rangle$-, and $\langle \hbox{111}\rangle$ -Oriented Si Nanowires

(2012) Yann-Michel Niquet et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Effects of Strain on the Carrier Mobility in Silicon Nanowires

(2012) Yann-Michel Niquet et al.   NANO LETTERS

A Comparative Study of Surface-Roughness-Induced Variability in Silicon Nanowire and Double-Gate FETs

(2011) Alessandro Cresti et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETs

(2011) Lining Zhang et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

(2011) M. Aldegunde et al.   JOURNAL OF APPLIED PHYSICS

Atomistic simulations of low-field mobility in Si nanowires: Influence of confinement and orientation

(2011) Neophytos Neophytou et al.   PHYSICAL REVIEW B

Performance Prediction of Ultrascaled SiGe/Si Core/Shell Electron and Hole Nanowire MOSFETs

(2010) A. Paul et al.   IEEE ELECTRON DEVICE LETTERS

Computational Study on the Performance of Si Nanowire pMOSFETs Based on the $k \cdot p$ Method

(2010) Mincheol Shin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Strain effects on three-dimensional, two-dimensional, and one-dimensional silicon logic devices: Predicting the future of strained silicon

(2010) Mehmet O. Baykan et al.   JOURNAL OF APPLIED PHYSICS

Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

(2009) S. Poli et al.   IEEE ELECTRON DEVICE LETTERS

Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter

(2009) P. Hashemi et al.   IEEE ELECTRON DEVICE LETTERS

Strain Effects on Electronic Bandstructures in Nanoscaled Silicon: From Bulk to Nanowire

(2009) Tadashi Maegawa et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Original shaped nanowire metal-oxide-semiconductor field-effect transistor with enhanced current characteristics based on three-dimensional modeling

(2009) N. Pons et al.   JOURNAL OF APPLIED PHYSICS

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

(2009) K Rogdakis et al.   NANOTECHNOLOGY

Strain induced change of bandgap and effective mass in silicon nanowires

(2008) Daryoush Shiri et al.   APPLIED PHYSICS LETTERS

Size Dependence of Surface-Roughness-Limited Mobility in Silicon-Nanowire FETs

(2008) Stefano Poli et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Bandstructure Effects in Silicon Nanowire Electron Transport

(2008) Neophytos Neophytou et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Strain-Driven Electronic Band Structure Modulation of Si Nanowires

(2008) Ki-Ha Hong et al.   NANO LETTERS

Modeling of Nanoscale Devices

(2008) M.P. Anantram et al.   PROCEEDINGS OF THE IEEE

Two-band k·p model for the conduction band in silicon: Impact of strain and confinement on band structure and mobility

(2008) V. Sverdlov et al.   SOLID-STATE ELECTRONICS