Non-equilibrium Green’s function analysis of cross section and channel length dependence of phonon scattering and its impact on the performance of Si nanowire field effect transistors

On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients

(2010) Changwook Jeong et al.   JOURNAL OF APPLIED PHYSICS

Atomistic modeling of electron-phonon coupling and transport properties inn-type [110] silicon nanowires

(2010) Wenxing Zhang et al.   PHYSICAL REVIEW B

Channel-Length Dependence of Low-Field Mobility in Silicon-Nanowire FETs

(2009) S. Poli et al.   IEEE ELECTRON DEVICE LETTERS

Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study

(2009) Natalia Seoane et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Phonon- and surface-roughness-limited mobility of gate-all-around 3C-SiC and Si nanowire FETs

(2009) K Rogdakis et al.   NANOTECHNOLOGY

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

(2009) Mathieu Luisier et al.   PHYSICAL REVIEW B

Scaling of Nanowire Transistors

(2008) Bo Yu et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of the Transport Properties of Silicon Nanowires Using Deterministic and Monte Carlo Approaches to the Solution of the Boltzmann Transport Equation

(2008) Marco Lenzi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Silicon nanowires as efficient thermoelectric materials

(2008) Akram I. Boukai et al.   NATURE