Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter

Published 2009 View Full Article

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Title
Gate-All-Around n-MOSFETs With Uniaxial Tensile Strain-Induced Performance Enhancement Scalable to Sub-10-nm Nanowire Diameter
Authors
Keywords
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Journal
IEEE ELECTRON DEVICE LETTERS
Volume 30, Issue 4, Pages 401-403
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2009-02-20
DOI
10.1109/led.2009.2013877

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