Device- and Circuit-Level Variability Caused by Line Edge Roughness for Sub-32-nm FinFET Technologies

Title
Device- and Circuit-Level Variability Caused by Line Edge Roughness for Sub-32-nm FinFET Technologies
Authors
Keywords
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Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume 59, Issue 8, Pages 2057-2063
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Online
2012-06-19
DOI
10.1109/ted.2012.2199499

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