Impact of Forming Gas Annealing on the Performance of Surface-Channel $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With an ALD $\hbox{Al}_{2}\hbox{O}_{3}$ Gate Dielectric

Effects of (NH4)2S passivation on the off-state performance of 3-dimensional InGaAs metal-oxide-semiconductor field-effect transistors

(2011) J. J. Gu et al.   APPLIED PHYSICS LETTERS

Sub-10-nm Extremely Thin Body InGaAs-on-Insulator MOSFETs on Si Wafers With Ultrathin $\hbox{Al}_{2}\hbox{O}_{3}$ Buried Oxide Layers

(2011) Masafumi Yokoyama et al.   IEEE ELECTRON DEVICE LETTERS

Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors

(2011) R. D. Long et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Optimisation of the ammonium sulphide (NH4)2S passivation process on In0.53Ga0.47As

(2010) B. Brennan et al.   APPLIED SURFACE SCIENCE

Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics

(2010) Ashkar Ali et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Silane and Ammonia Surface Passivation Technology for High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs

(2010) Hock-Chun Chin et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Comparison of methods to quantify interface trap densities at dielectric/III-V semiconductor interfaces

(2010) Roman Engel-Herbert et al.   JOURNAL OF APPLIED PHYSICS

Effect of channel doping concentration and thickness on device performance for In0.53Ga0.47As metal-oxide-semiconductor transistors with atomic-layer-deposited Al2O3 dielectrics

(2009) Han Zhao et al.   APPLIED PHYSICS LETTERS

On the interface state density at In0.53Ga0.47As/oxide interfaces

(2009) G. Brammertz et al.   APPLIED PHYSICS LETTERS

A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer

(2009) Feng Zhu et al.   APPLIED PHYSICS LETTERS

Effects of Anneal and Silicon Interface Passivation Layer Thickness on Device Characteristics of In[sub 0.53]Ga[sub 0.47]As Metal-Oxide-Semiconductor Field-Effect Transistors

(2009) Feng Zhu et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

$\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ Channel MOSFETs With Self-Aligned InAs Source/Drain Formed by MEE Regrowth

(2009) U. Singisetti et al.   IEEE ELECTRON DEVICE LETTERS

Performance enhancement of n-channel inversion type InxGa1−xAs metal-oxide-semiconductor field effect transistor using ex situ deposited thin amorphous silicon layer

(2008) A. M. Sonnet et al.   APPLIED PHYSICS LETTERS