Article
Chemistry, Physical
Yuhang Guan, Yuqing Zhang, Jinxiong Li, Jiye Li, Yuhan Zhang, Zhenhui Wang, Yuancan Ding, Mansun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: In recent years, high-k gate dielectrics have received increasing attention in amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) due to the need for stronger gate controllability. This study developed an ultra-thin top-gate insulator of atomic-layer-deposited (ALD) HfOx for amorphous indium-gallium-zinc oxide (a-IGZO) TFTs. However, the reliability of the 4-nm HfOx-gated a-IGZO transistor is poor due to interface defects caused by the interface reaction between HfOx and a-IGZO during the ALD process. To improve stability, the a-IGZO channel is pre-treated with strong oxidizing plasma. However, further reducing HfOx thickness increases gate leakage current.
APPLIED SURFACE SCIENCE
(2023)
Article
Chemistry, Multidisciplinary
In Hye Kang, Sang Ho Hwang, Young Jo Baek, Seo Gwon Kim, Ye Lin Han, Min Su Kang, Jae Geun Woo, Jong Mo Lee, Eun Seong Yu, Byung Seong Bae
Summary: By investigating the interfacial oxidation between the gate metal and In-Ga-Zn oxide (IGZO), a top-gate oxide TFT was developed with low source-drain voltages below 0.5 V and a gate voltage swing less than 1 V, providing low power consumption. Through the application of positive bias to the gate metal for enhanced oxygen diffusion, the migration of oxygen was promoted, which is a key factor in interfacial oxidation.
Article
Materials Science, Ceramics
Kang-Hwan Bae, Seung-Hyun Lim, Kie Yatsu, Ick-Joon Park, Hyuck-In Kwon
Summary: This study investigated the physical and chemical properties of H2 plasma-treated tin oxide thin films and their applications in ambipolar thin-film transistors. The results showed that H2 plasma treatments induced changes in the chemical structures and surface morphologies of the thin films, improving their ambipolarity and electrical performance.
CERAMICS INTERNATIONAL
(2022)
Article
Engineering, Electrical & Electronic
Ja Hoon Koo, Juyeon Kang, Sungjun Lee, Jun-Kyul Song, Junhwan Choi, Jiyong Yoon, Hong Jun Park, Sung-Hyuk Sunwoo, Dong Chan Kim, Wangwoo Nam, Dae-Hyeong Kim, Sung Gap Im, Donghee Son
Summary: A thin and stretchable polymer layer fabricated by vacuum deposition can be used as the gate dielectric in stretchy carbon-nanotube-based transistors and circuits, which can function at 40% strain. This research is of great significance and is rated 9 out of 10 in importance.
NATURE ELECTRONICS
(2023)
Review
Physics, Applied
Federica Catania, Hugo de Souza Oliveira, Pasindu Lugoda, Giuseppe Cantarella, Niko Munzenrieder
Summary: The development of new materials and advanced fabrication techniques has allowed electronics to transform from bulky rigid structures to unobtrusive soft systems, leading to the realization of new thin-film devices on unconventional substrates. These innovations have enabled the creation of smart structures for tasks beyond the capabilities of traditional electronics or substrates.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2022)
Article
Nanoscience & Nanotechnology
Jiye Li, Yuhang Guan, Jinxiong Li, Yuqing Zhang, Yuhan Zhang, ManSun Chan, Xinwei Wang, Lei Lu, Shengdong Zhang
Summary: To enhance the downscaling potential of top-gate amorphous oxide semiconductor (AOS) thin-film transistors (TFTs), we implemented the ultra-thin gate insulator (GI) using atomic-layer-deposited (ALD) AlOx and HfOx. Both high-k GIs demonstrated good insulation properties even with a physical thickness of 4 nm. However, the HfOx-gated TFT showed higher gate leakage current and poorer subthreshold slope due to the small band offset and defective interface between a-IGZO and HfOx. The imperfect a-IGZO/HfOx interface also caused noticeable positive bias stress instability.
Article
Engineering, Electrical & Electronic
Jong-Heon Yang, Chun-Won Byun, Jae-Eun Pi, Hee-Ok Kim, Chi-Sun Hwang, Seunghyup Yoo
Summary: This study improved memory erase speed in amorphous oxide semiconductor memory thin-film transistor (TFT) by introducing new double-gate and body-contacted memory structures.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Engineering, Electrical & Electronic
Yu-Shien Shiah, Kihyung Sim, Yuhao Shi, Katsumi Abet, Shigenori Ueda, Masato Sasase, Junghwan Kim, Hideo Hosono
Summary: This study successfully fabricated ultrastable thin-film transistors with mobilities of 70 cm(2) (V s)(-1) by understanding the origins of instability in high-mobility amorphous oxide transistors. The research identified the sensitivity of amorphous oxide semiconductors to externally introduced impurities and defects, and explained the mechanism of how carbon-monoxide-related impurities affect the stability of high-mobility indium tin zinc oxide transistors.
NATURE ELECTRONICS
(2021)
Article
Chemistry, Physical
Hao Liu, Yamei Wang, Huan Zheng, Shuhao Wang, Run Zhao, Lei Zhang, Langsheng Ling, Haiyan Wang, Hao Yang, Jiyu Fan
Summary: In this study, the influence of thickness-dependent strain effect on the ferromagnetic insulating properties of LCO was investigated. It was found that the film strain decreased and the ferromagnetic property weakened with increasing film thickness, and the spin moment of Co3+ ions also reduced with increasing thickness. Increasing film thickness was unfavorable for the presence of eg electrons and for the intermediate-spin and high-spin states.
APPLIED SURFACE SCIENCE
(2024)
Article
Chemistry, Physical
Solah Park, Min-Kyu Song, Taehoon Sung, Jang-Yeon Kwon
Summary: The study found that low-temperature polysilicon transistors significantly degraded under X-ray irradiation, while amorphous indium-gallium-zinc oxide transistors were able to maintain stable performance.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Jae-Yun Lee, Gergely Tarsoly, Fei Shan, Sung-Jin Kim
Summary: In this study, the effect of oxygen plasma posttreatment on the performance of thermally annealed, sputter-deposited a-IGZO thin films was investigated. The results showed that temporarily exposing the film surface to high-energy oxygen species can improve the charge transport properties, leading to superior device performance. However, prolonged exposure deteriorates the device, highlighting the importance of designing and optimizing the fabrication processes of oxide semiconductor devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Biochemistry & Molecular Biology
Wangying Xu, Tao Peng, Shuangmu Zhuo, Qiubao Lin, Weicheng Huang, Yujia Li, Fang Xu, Chun Zhao, Deliang Zhu
Summary: Solution-grown phosphorus-doped indium oxide thin-film transistors (IPO TFTs) demonstrate promising characteristics such as high mobility and transparency, while effectively inhibiting oxygen-vacancy-related defects.
INTERNATIONAL JOURNAL OF MOLECULAR SCIENCES
(2022)
Article
Materials Science, Ceramics
Ram Narayan Chauhan, Nidhi Tiwari
Summary: ZIWO thin film transistors fabricated by RF magnetron sputtering exhibit better device performance compared to IWO and ZnO counterparts.
JOURNAL OF NON-CRYSTALLINE SOLIDS
(2021)
Article
Materials Science, Multidisciplinary
Cagri Durmus, Tamer Akan
Summary: Vanadium pentoxide (V2O5) thin films were deposited on glass substrates using a Thermionic vacuum arc (TVA) plasma system. The films were characterized using various techniques, and it was found that all deposited films had an amorphous structure and low roughness. The thickness and optical properties of the films were also determined. The results showed that the TVA method can produce V2O5 thin films with specific features that are not easily achievable with other methods.
Article
Chemistry, Multidisciplinary
Taehoon Sung, Min-Kyu Song, Se-Yeon Jung, Sein Lee, Young-Woong Song, Solah Park, Jang-Yeon Kwon
Summary: This research presents a method to reduce the resistance of amorphous indium-gallium-zinc-oxide (a-IGZO) using a vacuum-free solution-based metallization (VSM) process. By dipping the a-IGZO into trimethyl aluminium (TMA) solution, the conductivity of a-IGZO can be significantly enhanced. Self-aligned top-gate (SATG) a-IGZO thin-film-transistors (TFTs) were successfully fabricated using the VSM process, and the mechanism was explained using X-ray photoelectron spectroscopy (XPS).
Article
Chemistry, Multidisciplinary
Jixin Yang, Jason R. Hyde, James W. Wilson, Kanad Mallik, Pier J. Sazio, Paul O'Brien, Mohamed A. Malik, Mohammad Afzaal, Chinh Q. Nguyen, Michael W. George, Steven M. Howdle, David C. Smith
ADVANCED MATERIALS
(2009)
Article
Engineering, Electrical & Electronic
M. M. A. Hakim, L. Tan, A. Abuelgasim, K. Mallik, S. Connor, A. Bousquet, C. H. de Groot, W. Redman-White, S. Hall, P. Ashburn
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2010)
Article
Electrochemistry
D. M. Jordan, R. H. Haslam, Kanad Mallik, R. J. Falster, P. R. Wilshaw
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
(2010)
Article
Chemistry, Physical
David Cook, Philip N. Bartlett, Wenjian Zhang, William Levason, Gillian Reid, Jie Ke, Wenta Su, Michael W. George, James Wilson, David Smith, Kanad Mallik, Edward Barrett, Pier Sazio
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2010)
Article
Multidisciplinary Sciences
Jie Ke, Wenta Su, Steven M. Howdle, Michael W. George, David Cook, Magda Perdjon-Abel, Philip N. Bartlett, Wenjian Zhang, Fei Cheng, William Levason, Gillian Reid, Jason Hyde, James Wilson, David C. Smith, Kanad Mallik, Pier Sazio
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA
(2009)
Article
Engineering, Electrical & Electronic
A. Abuelgasim, K. Mallik, P. Ashburn, D. M. Jordan, P. R. Wilshaw, R. J. Falster, C. H. de Groot
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2011)
Article
Engineering, Electrical & Electronic
Kanad Mallik, A. Abuelgasim, N. Hashim, P. Ashburn, C. H. de Groot
SOLID-STATE ELECTRONICS
(2014)
Proceedings Paper
Engineering, Biomedical
A. Abuelgasim, Kanad Mallik, P. Ashburn, C. H. De Groot
BIOELECTRONICS, BIOMEDICAL, AND BIOINSPIRED SYSTEMS V AND NANOTECHNOLOGY V
(2011)
Proceedings Paper
Electrochemistry
Mohammad Afzaal, Gabriele Aksomaityte, Paul O'Brien, Fei Cheng, Michael W. George, Andrew L. Hector, Steven M. Howdle, Jason R. Hyde, William Levason, Mohamed A. Malik, Kanad Mallik, Chinh Q. Nguyen, Gillian Reid, Pier Sazio, David C. Smith, Michael Webster, James W. Wilson, Jixin Yang, Wenjian Zhang
EUROCVD 17 / CVD 17
(2009)
Article
Chemistry, Physical
M. Roos, V. Baranauskas, M. Fontana, H. J. Ceragioli, A. C. Peterlevitz, K. Mallik, F. T. Degasperi
APPLIED SURFACE SCIENCE
(2007)
Article
Physics, Applied
Kanad Mallik, C. H. de Groot, P. Ashburn, P. R. Wilshaw
APPLIED PHYSICS LETTERS
(2006)
Article
Physics, Condensed Matter
LH Chong, K Mallik, CH de Groot, R Kersting
JOURNAL OF PHYSICS-CONDENSED MATTER
(2006)
Article
Engineering, Electrical & Electronic
LH Chong, K Mallik, CH de Groot
MICROELECTRONIC ENGINEERING
(2005)
Article
Engineering, Electrical & Electronic
K Mallik, RJ Falster, PR Wilshaw
SOLID-STATE ELECTRONICS
(2004)