期刊
IEEE ELECTRON DEVICE LETTERS
卷 34, 期 2, 页码 268-270出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2012.2234434
关键词
Insulators; plasma applications; thin-film transistors; vacuum technology
资金
- Innovative Electronics Manufacturing Research Centre, Loughborough University, Loughborough, U.K.
- Engineering and Physical Sciences Research Council [EP/H03014X/1] Funding Source: researchfish
- EPSRC [EP/H03014X/1] Funding Source: UKRI
The electrical characteristics of all-vacuum-processed pentacene thin-film transistors, with stable and reproducible performance, using high-throughput roll-to-roll processing have been demonstrated. The method allows a polymerized tripropyleneglycol diacrylate (TPGDA) insulator layer of thickness up to 1 mu m to be obtained in a single pass by ultrahigh flash evaporation of a monomer onto a web travelling at 10 m . min(-1) and subsequent irradiation with an argon plasma emitted from a dc-sputtering cathode. The resulting organic thin-film transistors (OTFTs) exhibited field-effect mobility of 0.12 cm(2) V-1 . s(-1), a threshold voltage of -21 V, a turn-on voltage of -2 V, and an on/off current ratio of 1 x 10(5). The effect of ambient air moisture on the device characteristics was investigated, showing that moisture has a reversible effect on the performance of the OTFTs exhibiting a shift in the turn-on voltage and deterioration in the on-off ratio. However, the effect was eliminated using a simple conventional encapsulation method. Our vacuum-based process thus demonstrates excellent potential for providing an alternative route to low-cost large-area organic electronics manufacturing.
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