Article
Engineering, Electrical & Electronic
Yuan-Chun Luo, Abhishek Khanna, Benjamin Grisafe, Jiaxin Sun, Sourav Dutta, Lindsey E. Noskin, Carolina Adamo, Antonio B. Mei, Ram Krishna Ghosh, Michael Colletta, M. E. Holtz, Vincent Gambin, Lena F. Kourkoutis, Shimeng Yu, Darrell G. Schlom, Suman Datta
Summary: In this study, we leverage the high-temperature spin-state driven insulator-to-metal phase transition to demonstrate a two-terminal bi-directional selector suitable for cross-point embedded non-volatile memory. The selector devices show electrically triggered abrupt IMT switching across a range of chip operating temperatures, with fast switching speed and high cycling endurance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Physics, Applied
Xiang Zhou, Haoyang Sun, Zhen Luo, Haoyu Zhao, Deshan Liang, Hasnain Mehdi Jafri, Houbing Huang, Yuewei Yin, Xiaoguang Li
Summary: Exotic polarization domain configurations in BiFeO3 nanoislands have been achieved, showing promise for next-generation nanoelectronics and high-density information storage.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Jeonghee Park, Zhe Wu, Jiho Park, Jonguk Kim, Bongjin Kuh, Jongmyeong Lee, Seungwoo Hwang, Seungwu Han
Summary: In order to address endurance failures caused by etching damage in 3D cross-point memory, a non-patterning filling method is proposed, which involves the reflow fill of carbon-doped GST films into confined cells. This method successfully resolves endurance failures caused by voiding and allows for the preservation of the properties of GST phase-change materials.
ADVANCED MATERIALS TECHNOLOGIES
(2023)
Article
Chemistry, Physical
Yawar Abbas, Boyu Wen, Zbig Wasilewski, Dayan Ban, Moh'd Rezeq
Summary: The conductive-mode atomic force microscope was used to characterize indium arsenide quantum dots. The measurements showed typical Schottky diode behavior, with distinct I-V curves observed in sequential measurements. The change in electronic states of the quantum dots during the initial voltage sweep was indicated by the discrete voltage values at the forward bias.
APPLIED SURFACE SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
Byoung-Seok Lee, Min-Won Kim, Ji-Hun Kim, Sang-Dong Yoo, Tae-Hun Shim, Jea-Gun Park
Summary: This study utilized a vertical Thyristor with specific n(+)-base width to achieve operation within a cross-point memory cell without the need for a selector, resulting in high endurance cycles and a balance between storage volume and power consumption.
Article
Chemistry, Physical
Qinghua Zhao, Peng Chen, Dan Zheng, Tao Wang, Andres Castellanos-Gomez, Riccardo Frisenda
Summary: This study demonstrates a multifunctional device based on the van der Waals semiconductor Indium Selenide (InSe), which can function as a high-quality Schottky diode and a memory. By depositing the InSe channel onto graphite and platinum electrodes and implementing air passivation treatment, the device exhibits adjustable Schottky barrier height and photovoltaic parameters. This multifunctional behavior is attributed to trap state modulation.
Article
Engineering, Electrical & Electronic
Sanghyun Ban, Jangseop Lee, Taehoon Kim, Hyunsang Hwang
Summary: This study presents cell design parameters for a two-terminal ovonic threshold switch (OTS) and phase-change memory (PCM)-based array, using a 3-D cross-point array (XPA) as an example. The simulation of a 1-Mb 3-D XPA in MATLAB shows that the variability of OTS characteristics accelerates the IR drop, reducing the read window margin (RWM) and inhibit-fail margin (IFM) of cells in real XPAs. The study suggests that balancing the Rrst of the PCM can minimize errors from insufficient RWMs and inhibit fails, improving the performance of the 3-D XPA device.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Multidisciplinary Sciences
Jiabin Shen, Shujing Jia, Nannan Shi, Qingqin Ge, Tamihiro Gotoh, Shilong Lv, Qi Liu, Richard Dronskowski, Stephen R. Elliott, Zhitang Song, Min Zhu
Summary: The research introduces a single-element tellurium (Te) volatile switch with high drive current density, large ON/OFF current ratio, and fast switching speed, which may help realize denser memory chips.
Article
Engineering, Electrical & Electronic
Seok Man Hong, Myoungsub Kim, Seonghun Lee, Sang Hyun Ban, Hwanjun Zang, Hyejung Choi, Taehoon Kim
Summary: This letter discusses the impact of OTS relaxation oscillation effect on PCM, showing that when the current is below hold current, it may increase the fail bit rate of RESET-to-SET transition. Experimental results indicate that current oscillation can lead to unstable current supply for crystallization and even induce partial amorphization.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Crystallography
Shih-Wei Ying, Shou-Yen Chao, Ming-Chang Shih, Chien-Jung Huang, Wen-How Lan
Summary: The p-Si/n-MgZnO:Er/Ga2O3/ZnO:In diodes with different Ga2O3 thicknesses were fabricated. The effects of Ga2O3 layer thickness on diode properties were investigated. The Ga2O3 barrier layer improves performance for rare earth-related light-emitting devices.
Article
Chemistry, Multidisciplinary
Hao Wu, Yinghao Cui, Jinlong Xu, Zhong Yan, Zhenda Xie, Yonghong Hu, Shining Zhu
Summary: In this study, a multifunctional electronic device based on two-dimensional heterostructure was successfully designed and fabricated, which integrates logic operations, data storage, and rectification functions, providing inspiration for the design of next-generation computation beyond the von Neumann architecture.
Article
Multidisciplinary Sciences
Giuseppe Leonetti, Matteo Fretto, Fabrizio Candido Pirri, Natascia De Leo, Ilia Valov, Gianluca Milano
Summary: This study analyzes the effect of electrode metals on the resistive switching functionalities of NbOx-based memristive cells. The results show that the electronic blocking character of Schottky interfaces provided by Au and Pt metal electrodes results in better resistive switching performances. Furthermore, Pt is the best choice for realizing memristive cells with low variability in operating voltages, resistance states, and device-to-device variability when reducing the NbOx thickness.
SCIENTIFIC REPORTS
(2023)
Article
Chemistry, Physical
Navneet Bhardwaj, Bhanu B. Upadhyay, Yogendra K. Yadav, Sreenadh Surapaneni, Swaroop Ganguly, Dipankar Saha
Summary: In this study, 10 nm of amorphous Nb2O5 was successfully grown on an AlGaN/GaN heterostructure, with ideal stoichiometry and a band gap of 4.15 eV determined by XPS analysis. Additionally, TEM confirmed the thickness and crystallinity of the oxide, while AFM measured a RMS roughness of 1.32 nm. The capacitive behavior of Nb2O5 and its interface characteristics with AlGaN were estimated by CV characteristics.
APPLIED SURFACE SCIENCE
(2022)
Article
Robotics
Xian-Feng Han, Zhang-Yue He, Jia Chen, Guo-Qiang Xiao
Summary: This paper introduces the application of self-attention mechanism in point cloud processing and proposes a network called 3CROSSNet for point cloud representation learning. The network includes a point-wise feature pyramid module and cross-level cross-attention modules to enhance performance.
IEEE ROBOTICS AND AUTOMATION LETTERS
(2022)
Article
Multidisciplinary Sciences
Catarina Viegas Dias, Clara Jasmins, David Rodrigues, Bruno Heleno
Summary: Contrary to clinician's beliefs, the majority of clinical questions can be answered with online evidence-based practice resources, and most of them with pre-appraised evidence. This study could encourage family doctors to increase the use of clinical summaries. Furthermore, these results highlight the importance of teaching how to search for and apply pre-appraised evidence.
Article
Chemistry, Multidisciplinary
Yourack Lee, Viet Thong Le, Jeong-Gyun Kim, Haeyong Kang, Eun Sung Kim, Seung-Eon Ahn, Dongseok Suh
ADVANCED FUNCTIONAL MATERIALS
(2018)
Article
Engineering, Electrical & Electronic
Hyeon-Jun Lee, Katsumi Abe, Sung Haeng Cho, June-Seo Kim, Seokhwan Bang, Myoung-Jae Lee
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2018)
Article
Engineering, Electrical & Electronic
Minho Song, Hyunki Lee, David H. Seo, Hyeon-Jun Lee, June-Seo Kim, Hui-Sup Cho, Hong-Kun Lyu, Sunae Seo, Myoung-Jae Lee
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2018)
Article
Materials Science, Multidisciplinary
Moonyoung Jung, Youngji Noh, Dongseok Suh, Seung-Eon Ahn
ADVANCED MATERIALS TECHNOLOGIES
(2018)
Article
Materials Science, Multidisciplinary
Sanghyun Park, Min Chul Chun, Solmin Park, Ga-yeon Park, Moonyoung Jung, Youngji Noh, Seung-Eon Ahn, Bo Soo Kang
CURRENT APPLIED PHYSICS
(2019)
Article
Chemistry, Multidisciplinary
Cheol-Min Hyun, Jeong-Hun Choi, Seung Won Lee, Seung-Young Seo, Myoung-Jae Lee, Se-Hun Kwon, Ji-Hoon Ahn
CRYSTAL GROWTH & DESIGN
(2019)
Article
Materials Science, Multidisciplinary
Youngji Noh, Moonyoung Jung, Jungkyu Yoon, Seunghyeon Hong, Sanghyun Park, Bo Soo Kang, Seung-Eon Ahn
CURRENT APPLIED PHYSICS
(2019)
Article
Physics, Applied
Jungkyu Yoon, Seunghyeon Hong, Yong Won Song, Ji-Hoon Ahn, Seung-Eon Ahn
APPLIED PHYSICS LETTERS
(2019)
Article
Multidisciplinary Sciences
Hyeon-Jun Lee, Katsumi Abe, Hee Yeon Noh, June-Seo Kim, Hyunki Lee, Myoung-Jae Lee
SCIENTIFIC REPORTS
(2019)
Article
Multidisciplinary Sciences
Jaehyun Kim, Sung-Min Kwon, Yeo Kyung Kang, Yong-Hoon Kim, Myung-Jae Lee, Kwangjoon Han, Antonio Facchetti, Myung-Gil Kim, Sung Kyu Park
Article
Materials Science, Multidisciplinary
Dante Ahn, Seung-Eon Ahn
Article
Chemistry, Multidisciplinary
Sunghun Lee, Linh Truong, Myoung-Jae Lee, Seung-Hyun Chun
Summary: Two approaches for the exfoliation of SnSe2 bulk crystals were reported in this study - electrochemical and mechanical methods. High quality single crystalline flakes were obtained from both methods, showing distinct thickness and lateral size distributions. Mechanical exfoliation produced SnSe2 flakes with peculiar behavior in photocurrent measurements.
CRYSTAL GROWTH & DESIGN
(2021)
Article
Chemistry, Multidisciplinary
Wonwoo Kho, Gyuil Park, Jisoo Kim, Hyunjoo Hwang, Jisu Byun, Yoomi Kang, Minjeong Kang, Seung-Eon Ahn
Summary: In this study, the implementation of spike timing-dependent plasticity (STDP) rule in the FTJ device was successful. Based on the simulation of handwriting image classification, it was demonstrated that the FTJ device can be used as a synaptic device for implementing an SNN.
Article
Chemistry, Multidisciplinary
Jisu Byun, Wonwoo Kho, Hyunjoo Hwang, Yoomi Kang, Minjeong Kang, Taewan Noh, Hoseong Kim, Jimin Lee, Hyo-Bae Kim, Ji-Hoon Ahn, Seung-Eon Ahn
Summary: This study systematically explores the impact of various input spike types on the storage characteristics of FTJ devices and finds that the square-triangle spike exhibits good linearity and symmetry, with a wide range of weight values depending on the spike offset. The spike shape plays a crucial role in altering synaptic connections, representing the strength of the signals.
Article
Chemistry, Multidisciplinary
Myoung-Jae Lee, David H. Seo, Sung Min Kwon, Dohun Kim, Youngwook Kim, Won Seok Yun, Jung-Hwa Cha, Hyeon-Kyo Song, Shinbuhm Lee, MinKyung Jung, Hyeon-Jun Lee, June-Seo Kim, Jae-Sang Heo, Sunae Seo, Sung Kyu Park
