High-Power Blue-Violet Semipolar ($20\bar{2}\bar{1}$) InGaN/GaN Light-Emitting Diodes with Low Efficiency Droop at 200 A/cm$^{2}$

Indirect Auger recombination as a cause of efficiency droop in nitride light-emitting diodes

(2011) Emmanouil Kioupakis et al.   APPLIED PHYSICS LETTERS

30-mW-Class High-Power and High-Efficiency Blue Semipolar (10\bar1\bar1) InGaN/GaN Light-Emitting Diodes Obtained by Backside Roughening Technique

(2010) Yuji Zhao et al.   Applied Physics Express

High Quality InGaN/AlGaN Multiple Quantum Wells for Semipolar InGaN Green Laser Diodes

(2010) You-Da Lin et al.   Applied Physics Express

High-Efficiency Single-Quantum-Well Green and Yellow-Green Light-Emitting Diodes on Semipolar (20\bar21) GaN Substrates

(2010) Shuichiro Yamamoto et al.   Applied Physics Express

Optical Polarization Characteristics of InGaN Quantum Wells for Green Laser Diodes on Semi-Polar {20\bar21} GaN Substrates

(2010) Takashi Kyono et al.   Applied Physics Express

Optimization of Device Structures for Bright Blue Semipolar (10\bar1\bar1) Light Emitting Diodes via Metalorganic Chemical Vapor Deposition

(2010) Yuji Zhao et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Vertical Stand Transparent Light-Emitting Diode Architecture for High-Efficiency and High-Power Light-Emitting Diodes

(2010) Chih-Chien Pan et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

531 nm Green Lasing of InGaN Based Laser Diodes on Semi-Polar {20\bar21} Free-Standing GaN Substrates

(2009) Yohei Enya et al.   Applied Physics Express