Thin-film transistor behaviour and the associated physical origin of water-annealed In–Ga–Zn oxide semiconductor

标题
Thin-film transistor behaviour and the associated physical origin of water-annealed In–Ga–Zn oxide semiconductor
作者
关键词
-
出版物
JOURNAL OF PHYSICS D-APPLIED PHYSICS
Volume 45, Issue 41, Pages 415307
出版商
IOP Publishing
发表日期
2012-09-30
DOI
10.1088/0022-3727/45/41/415307

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