Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors
出版年份 2013 全文链接
标题
Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors
作者
关键词
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出版物
APPLIED PHYSICS LETTERS
Volume 102, Issue 14, Pages 143506
出版商
AIP Publishing
发表日期
2013-04-13
DOI
10.1063/1.4801762
参考文献
相关参考文献
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