Defect reduction in photon-accelerated negative bias instability of InGaZnO thin-film transistors by high-pressure water vapor annealing

Improvement in the device performance of tin-doped indium oxide transistor by oxygen high pressure annealing at 150 °C

(2012) Se Yeob Park et al.   APPLIED PHYSICS LETTERS

Amorphous InGaZnO Thin-Film Transistors—Part I: Complete Extraction of Density of States Over the Full Subband-Gap Energy Range

(2012) Yongsik Kim et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Simultaneous modification of pyrolysis and densification for low-temperature solution-processed flexible oxide thin-film transistors

(2012) You Seung Rim et al.   JOURNAL OF MATERIALS CHEMISTRY

Gate bias-stress induced hump-effect in transfer characteristics of amorphous-indium-galium-zinc-oxide thin-fim transistors with various channel widths

(2011) Mallory Mativenga et al.   APPLIED PHYSICS LETTERS

Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

(2011) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

(2011) Kwang Hwan Ji et al.   APPLIED PHYSICS LETTERS

Light Effect on Negative Bias-Induced Instability of HfInZnO Amorphous Oxide Thin-Film Transistor

(2011) Dae Woong Kwon et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Depth analysis of subgap electronic states in amorphous oxide semiconductor, a-In-Ga-Zn-O, studied by hard x-ray photoelectron spectroscopy

(2011) Kenji Nomura et al.   JOURNAL OF APPLIED PHYSICS

Effects of high-pressure H2O-annealing on amorphous IGZO thin-film transistors

(2011) Hyun Soo Shin et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Improvement in the photon-induced bias stability of Al–Sn–Zn–In–O thin film transistors by adopting AlOx passivation layer

(2010) Shinhyuk Yang et al.   APPLIED PHYSICS LETTERS

Light induced instabilities in amorphous indium–gallium–zinc–oxide thin-film transistors

(2010) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

The impact of gate dielectric materials on the light-induced bias instability in Hf–In–Zn–O thin film transistor

(2010) Jang-Yeon Kwon et al.   APPLIED PHYSICS LETTERS

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

The effect of moisture on the photon-enhanced negative bias thermal instability in Ga–In–Zn–O thin film transistors

(2009) Kwang-Hee Lee et al.   APPLIED PHYSICS LETTERS

Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors

(2009) Tze-Ching Fung et al.   JOURNAL OF APPLIED PHYSICS

Electronic structure of the amorphous oxide semiconductor a-InGaZnO4-x: Tauc-Lorentz optical model and origins of subgap states

(2009) Toshio Kamiya et al.   PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE

Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states

(2008) Hsing-Hung Hsieh et al.   APPLIED PHYSICS LETTERS

Defect passivation and homogenization of amorphous oxide thin-film transistor by wet O2 annealing

(2008) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Physics of amorphous conducting oxides

(2008) John Robertson   JOURNAL OF NON-CRYSTALLINE SOLIDS