期刊
IEEE TRANSACTIONS ON ELECTRON DEVICES
卷 59, 期 10, 页码 2689-2698出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/TED.2012.2208969
关键词
Amorphous InGaZnO (a-IGZO); density of states (DOS); full subband gap; thin-film transistors (TFTs)
资金
- National Research Foundation of Korea [2012-0000147, 2010-0013883]
- Ministry of Education, Science, and Technology, Korea
- Kookmin University
- National Research Foundation of Korea [2010-0013883, 2009-0080344] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
A combination of the multifrequency C-V and the generation-recombination current spectroscopy is proposed for a complete extraction of density of states (DOS) in amorphous InGaZnO thin-film transistors (a-IGZO TFTs) over the full subband-gap energy range (E-V <= E <= E-C) including the interface trap density between the gate oxide and the a-IGZO active layer. In particular, our result on the separate extraction of acceptor- and donor-like DOS is noticeable for a systematic design of amorphous oxide semiconductor TFTs because the former determines their dc characteristics and the latter does their threshold voltage (V-T) instability under practical operation conditions. The proposed approach can be used to optimize the fabrication process of thin-film materials with high mobility and stability for mass-production-level amorphous oxide semiconductor TFTs.
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