Article
Physics, Multidisciplinary
Chen Wang, Pan Wen, Cong Peng, Meng Xu, Long-Long Chen, Xi-Feng Li, Jian-Hua Zhang
Summary: In this study, the performance and stability of amorphous indium gallium zinc oxide (IGZO) thin film transistors (TFT) with different passivation layers (silicon dioxide, polyimide, or silicon dioxide-polyimide) were compared. The results showed that the polyimide passivation layer greatly improved the TFT performance, resulting in higher field-effect mobility, decreased subthreshold swing, and increased on-off current ratio. The polyimide passivation layer also showed better electrical degradation resistance and bias stability, making it a promising candidate for display industry applications.
ACTA PHYSICA SINICA
(2023)
Article
Engineering, Electrical & Electronic
Hyunhee Kim, Taegyu Kim, Youngjin Kang, Seoung-Pil Jeon, Jiwan Kim, Jaehyun Kim, Sung Kyu Park, Yong-Hoon Kim
Summary: Researchers have successfully demonstrated sub-volt operating metal-oxide thin-film transistors using high-k gadolinium-doped hafnium oxide films. The Gd doping significantly improved the leakage current characteristics compared to undoped HfO2 films, making the high-k HGO film a promising candidate for low-power consumption sub-volt operating TFTs.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2023)
Article
Engineering, Electrical & Electronic
Wei Zhong, Liangyun Kang, Sunbin Deng, Lei Lu, Ruohe Yao, Linfeng Lan, Hoi Sing Kwok, Rongsheng Chen
Summary: The study found that ITZO thin-film transistors with a scandium oxide (Sc2O3) passivation layer showed excellent electrical performance and stability, especially under negative bias temperature stress and positive bias temperature stress. In contrast, devices with an aluminum oxide (Al2O3) passivation layer exhibited poorer stability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Ablat Abliz, Patigul Nurmamat, Da Wan
Summary: In this study, hetero-structured and self-passivated oxide thin film transistors (TFTs) were fabricated successfully. A rational design achieved a high field-effect mobility and small sub-threshold swing. Experimental observations indicate that the accumulation of free carriers near the aIGZO:N2O/TiO2 interfaces resulted from the transfer of electrons. Additionally, appropriate treatment reduced defects and trap density, and the ultra-thin TiO2 layer acted as a surface passivation layer.
APPLIED SURFACE SCIENCE
(2023)
Article
Materials Science, Multidisciplinary
Jimin Han, Boyoung Jeong, Yuri Kim, Joonki Suh, Hongsik Jeong, Hyun-Mi Kim, Tae-Sik Yoon
Summary: This study demonstrates the non-charge-storage-based nonvolatile memory characteristics associated with oxygen ion exchange. The modulation of channel conductance occurs through the exchange of oxygen ions between the indium-zinc oxide (IZO) channel and the oxygen-deficient HfO2-x gate oxide. The device shows nonvolatile retention properties and has potential for non-charge-storage-based nonvolatile memory application.
MATERIALS TODAY ADVANCES
(2022)
Article
Nanoscience & Nanotechnology
Zhi-Yue Li, Shu-Mei Song, Wan-Xia Wang, Jian-Hong Gong, Yang Tong, Ming-Jiang Dai, Song-Sheng Lin, Tian-Lin Yang, Hui Sun
Summary: In this study, homojunction thin-film transistors (TFTs) with amorphous indium gallium zinc oxide (a-IGZO) as active channel layers were fabricated by RF magnetron sputtering. The effect of oxygen partial pressure on the properties of IGZO thin films was investigated. It was found that the resistivity of IGZO thin films increases with higher oxygen partial pressure. Optimal electrical characteristics were observed in homojunction IGZO TFTs with an oxygen partial pressure of 1.96%.
Article
Engineering, Electrical & Electronic
Maruti B. Zalte, Tejas R. Naik, A. Alka, M. Ravikanth, V. Ramgopal Rao, Maryam Shojaei Baghini
Summary: By forming a self-assembled monolayer on the back channel of TFTs, passivation can effectively improve the electrical characteristics and stability of TFTs. Passivated TFTs show significant improvement in hysteresis and subthreshold slope, and exhibit excellent stability under positive and negative bias stress testing.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Physical
Gwang-Bok Kim, Nuri On, Taikyu Kim, Cheol Hee Choi, Jae Seok Hur, Jun Hyung Lim, Jae Kyeong Jeong
Summary: In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) films with a single spinel phase are successfully grown at a low temperature (300 degrees C) through careful cation composition design and a catalytic chemical reaction. Thin-film transistors (TFTs) with amorphous In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) channel layers show reasonable mobility, while TFTs with polycrystalline spinel In0.22Zn delta Sn0.78-delta O1.89-delta (delta = 0.55) channel layers exhibit high field-effect mobility and excellent stability.
Article
Engineering, Electrical & Electronic
S. Arulkumar, S. Parthiban, J. Y. Kwon
Summary: The room temperature sputtered indium silicon oxide thin-films were annealed at various temperatures and studied for thin-film transistor (TFT) active channel layer application. The results showed that the annealing temperature had a significant influence on the structure and properties of the thin films, and the highest mobility was achieved at an annealing temperature of 200 degrees Celsius.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2022)
Article
Nanoscience & Nanotechnology
Won-Yong Lee, Do Won Kim, Hyeon Joong Kim, Kyoungdu Kim, Sin-Hyung Lee, Jin-Hyuk Bae, In-Man Kang, Kwangeun Kim, Jaewon Jang
Summary: This study investigates the impact of annealing time of the Y2O3 passivation layer on the electrical properties and bias stabilities of sol-gel-deposited SnO2 thin-film transistors (TFTs). Optimization of the Y2O3 passivation layer improves the field-effect mobility, subthreshold swing, and on/off-current ratio of the SnO2 TFTs. The annealing time also controls the thickness and oxygen-vacancy concentration in the SnO2 channel layer. A thin Y2O3 passivation layer effectively blocks external molecules and enhances the device performance. A 15 min-annealed Y2O3 passivation layer achieves maximum electrical performance and long-term stability.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Automation & Control Systems
Dongseok Kwon, Eun Chan Park, Wonjun Shin, Ryun-Han Koo, Joon Hwang, Jong-Ho Bae, Daewoong Kwon, Jong-Ho Lee
Summary: This study reports a synaptic device based on a ferroelectric thin-film transistor (FeTFT) with an indium-gallium-zinc oxide (IGZO) channel and a metal-ferroelectric-metal-insulator-semiconductor (MFMIS) structure. The fabricated FeTFT exhibits a highly linear conductance response, large dynamic range, and low cycle-to-cycle variation, verifying the feasibility of FeTFT-based neuromorphic systems.
ADVANCED INTELLIGENT SYSTEMS
(2023)
Article
Chemistry, Physical
Ya-Hsiang Liang, Saravanan Kumaran, Michael Zharnikov, Yian Tai
Summary: Top gate thin film transistors using solution processes can reduce fabrication costs, but may result in gate leakage. Engineering the IGZO/insulator interface with self-assembled monolayers can effectively reduce leakage current in TFTs.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Wenxin Zou, Zhihao Liang, Xiao Fu, Honglong Ning, Xuan Zeng, Yubin Fu, Hongcheng Wang, Cheng Luo, Rihui Yao, Junbiao Peng
Summary: The amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) have garnered significant interest due to their high mobility, excellent homogeneity, and low processing temperature. A novel combined post-treatment incorporating low-temperature annealing and O(2) plasma treatment was proposed and proved promising in improving the performance of praseodymium-doped indium zinc oxide (PrIZO) thin films and TFTs.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Nanoscience & Nanotechnology
I. Sak Lee, Joohye Jung, Dong Hyun Choi, Sujin Jung, Kyungmoon Kwak, Hyun Jae Kim
Summary: A homojunction-structured oxide phototransistor based on mechano-chemically treated IGZO absorption layer exhibited outstanding optoelectronic characteristics and sensitivity, making it suitable for optical sensor applications.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Soochang You, Anvar Tukhtaev, Gergely Tarsoly, Han Lin Zhao, Xiao Lin Wang, Fei Shan, Jae-Yun Lee, Jin Hee Lee, Sung Il Jang, Yong Jin Jeong, Sung-Jin Kim
Summary: Solution processable metal oxide semiconductors offer opportunities for large area fabrication of transparent logic circuits. In this paper, we present our results on the fabrication of TFTs with IZO semiconductor film and optimize the device fabrication process by studying the effect of stacking multiple layers. The practical applicability of the TFTs is demonstrated by fabricating a load-type inverter circuit and measuring its electrical response.
JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY
(2023)
Article
Nanoscience & Nanotechnology
Sang Hoon Lee, Sangyoon Lee
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Chemistry, Multidisciplinary
Saurav Limbu, Kyung-Bae Park, Jiaying Wu, Hyojung Cha, Sungyoung Yun, Seon-Jeong Lim, Hao Yan, Joel Luke, Gihan Ryu, Chul-Joon Heo, Sunghan Kim, Yong Wan Jin, James R. Durrant, Ji-Seon Kim
Summary: The study identified the critical role of donor molecular structure in organic photodetectors, showing that subtle structural changes in blends can significantly impact optoelectronic performance. These insights provide valuable information for the development of high-performance OPDs and highlight key differences in the design of BHJ blends for OPD and OPV devices.
Correction
Nanoscience & Nanotechnology
Younhee Lim, Sungyoung Yun, Daiki Minami, Taejin Choi, Hyesung Choi, Jisoo Shin, Sungjun Park, Chul-Joon Heo, Dong-Seok Leem, Tadao Yagi, Kyung-Bae Park, Sunghan Kim
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Engineering, Electrical & Electronic
Hae In Yang, Woong Choi
Summary: Capacitance-voltage measurements of metal-oxide-semiconductor capacitors composed of monolayer MoS2 and Al2O3 gate dielectric show high-frequency behavior, with zero minimum capacitance. The results demonstrate the importance of understanding quantum capacitance for enhanced performance in metal-oxide-semiconductor devices based on monolayer MoS2 or other transition metal dichalcogenides.
MICROELECTRONIC ENGINEERING
(2021)
Article
Green & Sustainable Science & Technology
Sang Hoon Lee, Sangyoon Lee
Summary: This study presents the design of a comb-structured air-gap acceleration sensor and the materials and processes for highly productive roll-to-roll printed electronic fabrication of the sensor. The sensor is designed with multiple layers in two parts, processed separately on different flexible PET substrates, and then transferred and bonded to form an air-gap structure. Electrical characteristics of the sensor are provided by testing capacitance change as a function of acceleration.
INTERNATIONAL JOURNAL OF PRECISION ENGINEERING AND MANUFACTURING-GREEN TECHNOLOGY
(2022)
Article
Materials Science, Multidisciplinary
Jong Ho Jung, Woong Choi
Summary: The research demonstrates n-type doping of monolayer WSe2 by CF4 plasma treatment under mild process conditions. This doping is possibly due to the resulting Se-deficient monolayer WSe2 with negligible concentration of electronegative F atoms after CF4 plasma treatment. The results also suggest that CF4 plasma treatment can be an alternative n-type doping method for device integration of monolayer WSe2 and other transition metal dichalcogenides.
Article
Nanoscience & Nanotechnology
Hyeong-Ju Kim, In-Sun Jung, Seyoung Jung, Dongmin Kim, Daiki Minami, Sunjung Byun, Taejin Choi, Jisoo Shin, Sungyoung Yun, Chul-Joon Heo, Kyung-Bae Park, Soo Young Park, Seon-Jeong Lim, Hyo Sug Lee, Byoungki Choi
Summary: A novel series of donor-π-acceptor molecules designed with intramolecular chalcogen bonding exhibit excellent optical, thermal, and optoelectronic properties, with advantages in smaller absorption spectral widths, higher absorption coefficients, thermal stabilities, and charge carrier transport properties.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Nanoscience & Nanotechnology
Naotoshi Suganuma, Chul-Joon Heo, Daiki Minami, Sungyoung Yun, Sungjun Park, Younhee Lim, Feifei Fang, Byoungki Choi, Kyung-Bae Park
Summary: Improved photo-response characteristics in organic photodiodes (OPDs) can be achieved by introducing cascade hole transport layers (HTL) to reduce the decay time of remaining charges. When the energy level gaps are close to equal among the layers, cascade HTL can minimize the remaining photocurrent effectively in OPDs.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Multidisciplinary Sciences
Chiara Labanti, Jiaying Wu, Jisoo Shin, Saurav Limbu, Sungyoung Yun, Feifei Fang, Song Yi Park, Chul-Joon Heo, Younhee Lim, Taejin Choi, Hyeong-Ju Kim, Hyerim Hong, Byoungki Choi, Kyung-Bae Park, James R. Durrant, Ji-Seon Kim
Summary: This study investigates the light-intensity-dependent photoresponse time of organic photodetectors (OPDs) with two small-molecule donors co-evaporated with C-60 acceptors. The MPTA:C-60 blend shows the fastest response time at high-light intensities, but the slowest response at low-light intensities, potentially due to the presence of deep trap states. The disrupted molecular packing and HOMO level shift caused by C-60 contribute to the energetic inhomogeneity and limit the low-light photoresponse time.
NATURE COMMUNICATIONS
(2022)
Article
Optics
Sungjun Park, Younhee Lim, Chul-Joon Heo, Sungyoung Yun, Dong-Seok Leem, Sunghan Kim, Byoungki Choi, Kyung-Bae Park
Summary: The demand for high-definition CMOS image sensors has increased in recent years, and this study proposes transparent green-sensitive organic photodetectors (TG-OPDs) for organic-silicon hybrid CMOS image sensors, with high detectivity and responsivity.
Article
Nanoscience & Nanotechnology
Sangyeon Pak, Jiwon Son, Taehun Kim, Jungmoon Lim, John Hong, Younhee Lim, Chul-Joon Heo, Kyung-Bae Park, Yong Wang Jin, Kyung-Ho Park, Yuljae Cho, SeungNam Cha
Summary: A novel iodine gas doping method has been proposed to simultaneously modulate the electrical properties of both 2D MoS2 channel and 2D CuS electrode in a facile and cost-effective manner, allowing for the improvement of the control performance of electronic devices.
Article
Chemistry, Multidisciplinary
Seonghyeon Cho, Chul-Joon Heo, Younhee Lim, Seoyeon Oh, Daiki Minami, Minseok Yu, Hyunchae Chun, Sungyoung Yun, Hwijoung Seo, Feifei Fang, Jeong-Il Park, Cheol Ham, Jisoo Shin, Taejin Choi, Juhyung Lim, Hyeong-Ju Kim, Hye Rim Hong, Hiromasa Shibuya, Jeoungin Yi, Byoungki Choi, Kyung-Bae Park
Summary: This work describes the development of an organic photodiode receiver for high-speed optical wireless communication, achieving a data rate of up to 150 Mbps, which is 40 times faster than the previous fastest record. The OPD receiver also demonstrates significantly higher spectral efficiency compared to previously reported organic photovoltaic receivers.
Article
Materials Science, Multidisciplinary
Taejin Choi, Juhyung Lim, Daiki Minami, Chul-Joon Heo, Jisoo Shin, Sungyoung Yun, Young Mo Sung, Feifei Fang, Hyerim Hong, Hyeong-Ju Kim, Younhee Lim, Jeoungin Yi, Jeong-Il Park, Cheol Ham, Hiromasa Shibuya, Hwijoung Seo, Soohwan Sul, Byoungki Choi, Kyung-Bae Park
Summary: The development of light-absorbing organic molecules with calculated oscillator strength (f) is important for improving the performance of organic photoelectric devices. However, most devices are composed of organic thin films rather than single molecules. In this study, three novel organic molecules with similar oscillator strengths but different molecular volumes were designed and synthesized. The molecule with the smallest volume and highest packing density showed the highest absorption coefficient and the best performance in organic thin films.
ADVANCED OPTICAL MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Feifei Fang, Daiki Minami, Sungyoung Yun, Chul-Joon Heo, Hiromasa Shibuya, Hyerim Hong, Byoungki Choi, Kyung-Bae Park
Summary: In this study, the influence of axial fluorination of SubPc on the photoresponsivity of OPD devices with bulk heterojunction (BHJ) configurations was explored. The novel surface photovoltage (SPV) analysis combined with air photoemission spectroscopy was used to elucidate the specific roles of rapid decay and intrinsic trap state in accelerating the photoresponsivity of fluorinated SubPc. Furthermore, advanced computational techniques, such as molecular dynamics (MD) and density functional theory (DFT) calculations, provided deeper insights into the underlying mechanisms based on electron hopping rates and energy disordering.
JOURNAL OF MATERIALS CHEMISTRY C
(2022)
Article
Materials Science, Multidisciplinary
Minji Kang, Jaegab Lee, Woong Choi
Summary: The study demonstrates that the in situ growth of MoOxSy particles in MoS2 thin films can achieve electron doping, enhancing the electrical properties of MoS2 thin films for device fabrication.
JOURNAL OF MATERIALS SCIENCE
(2021)
