Reversible alternation between bipolar and unipolar resistive switching in Ag/MoS2/Au structure for multilevel flexible memory

Surface-enhanced Raman scattering of alkyne-conjugated MoS2: a comparative study between metallic and semiconductor phases

(2018) Rajeshkumar Anbazhagan et al.   Journal of Materials Chemistry C

Electron holography on HfO2/HfO2−xbilayer structures with multilevel resistive switching properties

(2017) G Niu et al.   NANOTECHNOLOGY

Sp2 clustering-induced improvement of resistive switching uniformity in Cu/amorphous carbon/Pt electrochemical metallization memory

(2017) Xiaoning Zhao et al.   Journal of Materials Chemistry C

Black Phosphorus Quantum Dots with Tunable Memory Properties and Multilevel Resistive Switching Characteristics

(2017) Su-Ting Han et al.   Advanced Science

Raman Shifts in Electron-Irradiated Monolayer MoS2

(2016) William M. Parkin et al.   ACS Nano

Coexistence of unipolar and bipolar modes in Ag/ZnO/Pt resistive switching memory with oxygen-vacancy and metal-Ag filaments

(2016) Han-Lu Ma et al.   Chinese Physics B

Multilevel programming in Cu/NiOy/NiOx/Pt unipolar resistive switching devices

(2016) P K Sarkar et al.   NANOTECHNOLOGY

Multilevel resistive switching and nonvolatile memory effects in epoxy methacrylate resin and carbon nanotube composite films

(2016) Yanmei Sun et al.   ORGANIC ELECTRONICS

Graphene-Modified Interface Controls Transition from VCM to ECM Switching Modes in Ta/TaOxBased Memristive Devices

(2015) Michael Lübben et al.   ADVANCED MATERIALS

Unipolar resistive switching behavior of amorphous gallium oxide thin films for nonvolatile memory applications

(2015) D. Y. Guo et al.   APPLIED PHYSICS LETTERS

Nonvolatile/volatile behaviors and quantized conductance observed in resistive switching memory based on amorphous carbon

(2015) Xiaoning Zhao et al.   CARBON

Memristive Behavior and Ideal Memristor of 1T Phase MoS2 Nanosheets

(2015) Peifu Cheng et al.   NANO LETTERS

Gate-tunable memristive phenomena mediated by grain boundaries in single-layer MoS2

(2015) Vinod K. Sangwan et al.   Nature Nanotechnology

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

(2015) Hangbing Lv et al.   Scientific Reports

Resistive switching in Ga- and Sb-doped ZnO single nanowire devices

(2015) Bo Wang et al.   Journal of Materials Chemistry C

Optimizing Hybridization of 1T and 2H Phases in MoS2Monolayers to Improve Capacitances of Supercapacitors

(2015) Lianfu Jiang et al.   Materials Research Letters

Comprehensive Physical Model of Dynamic Resistive Switching in an Oxide Memristor

(2014) Sungho Kim et al.   ACS Nano

Multilevel resistive switching effect in sillenite structure Bi12TiO20 thin films

(2014) Ruqi Chen et al.   APPLIED PHYSICS LETTERS

Resistive switching memories in MoS2 nanosphere assemblies

(2014) Xiao-Yong Xu et al.   APPLIED PHYSICS LETTERS

Multiflake Thin Film Electronic Devices of Solution Processed 2D MoS2 Enabled by Sonopolymer Assisted Exfoliation and Surface Modification

(2014) Xiaoyun Yu et al.   CHEMISTRY OF MATERIALS

Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

(2013) S. Balatti et al.   ADVANCED MATERIALS

Performance improvement of resistive switching memory achieved by enhancing local-electric-field near electromigrated Ag-nanoclusters

(2013) Z. Q. Wang et al.   Nanoscale

From point to extended defects in two-dimensional MoS2: Evolution of atomic structure under electron irradiation

(2013) Hannu-Pekka Komsa et al.   PHYSICAL REVIEW B

Mechanism for resistive switching in an oxide-based electrochemical metallization memory

(2012) Shanshan Peng et al.   APPLIED PHYSICS LETTERS

Memory Devices Using a Mixture of MoS2and Graphene Oxide as the Active Layer

(2012) Zongyou Yin et al.   Small

Preparation of MoS2-Polyvinylpyrrolidone Nanocomposites for Flexible Nonvolatile Rewritable Memory Devices with Reduced Graphene Oxide Electrodes

(2012) Juqing Liu et al.   Small

Flexible Resistive Switching Memory Device Based on Amorphous InGaZnO Film With Excellent Mechanical Endurance

(2011) Z. Q. Wang et al.   IEEE ELECTRON DEVICE LETTERS

Coexistence of the bipolar and unipolar resistive switching behaviours in Au/SrTiO3/Pt cells

(2011) Xianwen Sun et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Atomically thin layers of MoS2via a two step thermal evaporation–exfoliation method

(2011) Sivacarendran Balendhran et al.   Nanoscale

Coexistence of the bipolar and unipolar resistive-switching modes in NiO cells made by thermal oxidation of Ni layers

(2010) L. Goux et al.   JOURNAL OF APPLIED PHYSICS

Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films

(2010) Wan Shen et al.   JOURNAL OF APPLIED PHYSICS

Complementary resistive switches for passive nanocrossbar memories

(2010) Eike Linn et al.   NATURE MATERIALS

Multilevel resistive switching with ionic and metallic filaments

(2009) Ming Liu et al.   APPLIED PHYSICS LETTERS

Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices

(2009) Ugo Russo et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Investigation of resistive switching in Cu-doped HfO2thin film for multilevel non-volatile memory applications

(2009) Yan Wang et al.   NANOTECHNOLOGY

Effects of heat dissipation on unipolar resistance switching in Pt∕NiO∕Pt capacitors

(2008) S. H. Chang et al.   APPLIED PHYSICS LETTERS