期刊
NANOTECHNOLOGY
卷 28, 期 21, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1361-6528/aa6cd9
关键词
RRAM; electron holography; HfO2; resistive switching; multi-level
资金
- Deutsche Forschungsgemeinschaft (DFG) [SCHR 1123/7-2, AL 560/13-2]
- Natural Science Foundation of China [51602247]
Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico-chemical properties of oxygen-deficient amorphous HfO2-x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2-x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2-x/TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.
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