期刊
CHINESE PHYSICS B
卷 25, 期 12, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/25/12/127303
关键词
resistive switching; unipolar; bipolar; oxygen vacancy; metal; conductive filament
资金
- National Natural Science Foundation of China for Excellent Young Scholars [51422201]
- National Natural Science Foundation of China [51172041, 51372035, 11304035, 61574031, 61404026]
- National Basic Research Program of China [2012CB933703]
- 111 Project, China [B13013]
- Fund from Jilin Province, China [20140520106JH, 20140201008GX]
- Research Fund for the Doctoral Program of Higher Education, China [20130043110004]
- Fundamental Research Funds for the Central Universities, China [2412015KJ008, 2412016KJ003]
In this study, the unipolar resistive switching (URS) and bipolar resistive switching (BRS) are demonstrated to be coexistent in the Ag/ZnO/Pt memory device, and both modes are observed to strongly depend on the polarity of forming voltage. The mechanisms of the URS and BRS behaviors could be attributed to the electric-field-induced migration of oxygen vacancies (V-O) and metal-Ag conducting filaments (CFs) respectively, which are confirmed by investigating the temperature dependences of low resistance states in both modes. Furthermore, we compare the resistive switching (RS) characteristics (e.g., forming and switching voltages, reset current and resistance states) between these two modes based on V-O-and Ag-CFs. The BRS mode shows better switching uniformity and lower power than the URS mode. Both of these modes exhibit good RS performances, including good retention, reliable cycling and high-speed switching. The result indicates that the coexistence of URS and BRS behaviors in a single device has great potential applications in future nonvolatile multi-level memory.
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