Memory Devices Using a Mixture of MoS2and Graphene Oxide as the Active Layer

标题
Memory Devices Using a Mixture of MoS2and Graphene Oxide as the Active Layer
作者
关键词
-
出版物
Small
Volume 9, Issue 5, Pages 727-731
出版商
Wiley
发表日期
2012-11-19
DOI
10.1002/smll.201201940

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