Article
Engineering, Electrical & Electronic
Karl-Magnus Persson, Mamidala Saketh Ram, Lars-Erik Wernersson
Summary: This study demonstrates the benefits of adding 0.5-nm thick AlOx diffusion barriers at different electrode interfaces in HfOx resistive memory, which results in low switching voltages and high switching endurance. By controlling the resistance modulation with selectors, the study shows linear adjustment of the filament in its low resistive state, making the memory array less sensitive to voltage fluctuations and losses.
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY
(2021)
Article
Engineering, Electrical & Electronic
G. A. Sanca, M. Garcia-Inza, F. Golmar
Summary: Two multibit readout circuits based on non-balanced inverters were proposed in this study, including a flash-type ADC and a counter-type ADC. Simulations were conducted in 0.18 mu m CMOS technology, showing that the flash-type ADC has faster reading time while the counter-type ADC has larger layout area.
MICROELECTRONICS JOURNAL
(2021)
Article
Chemistry, Physical
LiY Feng, Jiajun Liu, Isabelle Huynen, Mustafa Z. Mahmoud, Majid Niaz Akhtar
Summary: Two distinct nanocomposites decorated with NiO nanoparticles were successfully synthesized using hydrothermal method. The physicochemical features of the samples were evaluated, and the microwave attenuation features were determined. The results demonstrate that adjusting the order and thickness of the layers in a bilayer absorber can improve microwave absorption performance.
JOURNAL OF COLLOID AND INTERFACE SCIENCE
(2022)
Article
Nanoscience & Nanotechnology
Jin Lei, Wen-Juan Ding, Chang Liu, Di Wu, Wei-Min Li, Ai-Dong Li
Summary: In this work, a Pt/Hf-based hybrid memory with excellent resistive switching characteristics and multi-state data storage capability was fabricated. The resistive switching mechanism based on conducting filaments was proposed, favoring occurrence at the interface of the hybrid Hf-HQ layer and Al2O3 layer for brilliant performances. Flexible hybrid memory devices on bendable mica showed great potential in flexible multilevel resistive random access memory applications.
Article
Engineering, Electrical & Electronic
Jian Song, Qinyuan Qiu, Xingzhou Su, Yulong Zhao, Yinghuai Qiang
Summary: The study demonstrated that the double-layer NiO hole transport layer can improve charge transfer at the NiO/perovskite interface and reduce carrier recombination loss of the device. Devices based on the double-layer NiO hole transport layer achieved higher fill factor and lower hysteresis effect, resulting in an increased power conversion efficiency of 14.3%.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Nanoscience & Nanotechnology
Wei Zhang, Jianzhang Lei, Yixian Dai, Xuehua Zhang, Limin Kang, Bowen Peng, Fangren Hu
Summary: In this study, the effect of top contact interface and microstructural characteristics of the insulating layers on resistive switching behaviors was investigated. The results show that the interfacial charge migration process plays a key role in the resistive switching process, and the electrode characteristics have a significant impact on the resistive switching performance.
Article
Chemistry, Multidisciplinary
M. Laura Urquiza, Md Mahbubul Islam, Adri C. T. van Duin, Xavier Cartoixa, Alejandro Strachan
Summary: Using molecular dynamics simulations, the atomic processes underlying forming, reset, and set in HfO2-based resistive random access memory (RRAM) cells are characterized. The formation and dissolution of conductive filaments during device operation are tracked with atomic detail. Reset can be achieved through a redox effect or a thermochemical process, while the set process involves lateral oxygen atoms.
Article
Computer Science, Information Systems
Van Truong Nguyen, Jie-Seok Kim, Jong-Wook Lee
Summary: This paper introduces a scalable computing-in-memory design approach based on a new ten-transistor static random access memory (SRAM) bit-cell, supporting multi-bit and binary MAC operations with high throughput and energy efficiency. The designs presented in the paper successfully address previous challenges, improve inference accuracy, solve the CDAC area issue, and demonstrate four 2-bit parallel multiplication using CDAC.
Article
Chemistry, Physical
Hyun Wook Shin, Young-Han Shin, Jong Yeog Son
Summary: The resistive switching characteristics of NiO films grown on Rh and Ni substrates were investigated. It was found that the compressive strain on the Ni substrate affected the forming, SET, and RESET voltages of NiO resistive switching random access memory capacitors. The experimental results were supported by reducing the compressive strain and oxygen deficiency energy through external force and first-principles calculations.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
Masud Rana Sk, Sunanda Thunder, David Lehninger, Yannick Raffel, Maximilian Lederer, Michael P. M. Jank, Thomas Kaempfe, Sourav De, Bhaswar Chakrabarti
Summary: In this paper, the impact of retention degradation on multibit operation in IGZO-based ferroelectric thin-film transistors (FeTFT) in content-addressable memory (CAM) cell applications is investigated. A scalable multibit 1FeTFT-1T-based CAM cell composed of one FeTFT and one transistor is proposed, which significantly improves density and energy efficiency compared to conventional CMOS-based CAM. The CAM operations with storage and search using experimentally calibrated IGZO-based FeTFT devices are demonstrated, and the impact of retention degradation on the search operation is studied. The proposed IGZO-based 3-bit and 2-bit CAM cells exhibit retention times of 104s and 106s, respectively, while the single-bit CAM cell shows lifelong (10 years) retention.
ACS APPLIED ELECTRONIC MATERIALS
(2023)
Article
Materials Science, Multidisciplinary
Anjan Kumar Jena, Mousam Charan Sahu, Sandhyarani Sahoo, Sameer Kumar Mallik, Gopal K. Pradhan, J. Mohanty, Satyaprakash Sahoo
Summary: This work demonstrates the low-power, low-voltage multilevel resistive switching of graphene oxide (GO) RRAM on a bismuth ferrite (BFO) thin film. The GO/BFO structure shows stable endurance characteristics and a larger memory window. The GO/BFO exhibits intermediate resistive states during the RESET process and can be configured for multilevel storage.
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING
(2022)
Article
Engineering, Electrical & Electronic
Shalu Saini, Anil Lodhi, Anurag Dwivedi, Arpit Khandelwal, Shree Prakash Tiwari
Summary: High-performance flexible resistive random access memory (RRAM) devices were achieved by engineering the switching layer with PVK:MoS2 composite and TiO2 bilayer. These devices demonstrated excellent switching performance, high repeatability, and retention time, and maintained high stability even under bending conditions.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Chemistry, Multidisciplinary
You-Sun Lee, Sung-Nam Kwon, Seok-In Na, Dohyung Kim, Sang-Woo Kim
Summary: Organic/inorganic halide perovskite materials have shown significant improvements in solar cells, and engineering the interfacial properties is crucial for enhancing performance and stability. In this study, a bilayer structure of PTAA/NiO was designed to improve the interfacial properties between the perovskite and the hole transport layer. The PTAA/NiO bilayer demonstrated higher performance by optimizing energy levels and facilitating charge extraction, resulting in a power conversion efficiency improvement from 17.29% to 19.05% in PSCs.
APPLIED SCIENCES-BASEL
(2022)
Article
Engineering, Electrical & Electronic
P. Bousoulas, C. Tsioustas, J. Hadfield, V Aslanidis, S. Limberopoulos, D. Tsoukalas
Summary: This paper presents a novel threshold switching memristor using SiO2-based CBRAM and Pt nanoparticles as a bottom electrode, which enables robust stochastic neuron activity. The probabilistic leaky-integrate-and-fire neuron properties and tunable integrate-and-fire properties were achieved using a simple PC circuit and stand-alone threshold switching elements, respectively.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Nanoscience & Nanotechnology
Taoufik Slimani Tlemcani, Clement Mauduit, Micka Bah, Meiling Zhang, Matthew Charles, Romain Gwoziecki, Arnaud Yvon, Daniel Alquier
Summary: This study investigates the formation of Au-free Ohmic contacts on p-type GaN using a bilayer Ni/Al-doped ZnO (AZO) thin film. The results show that the contact resistance can be significantly reduced using a suitable thermal process, reaching the lowest value of 1.85 x 10-4 ohm·cm2 for a sample with a 5 nm Ni layer annealed at 500 degrees C in air for 5 min.
ACS APPLIED MATERIALS & INTERFACES
(2023)
Article
Physics, Applied
Abubakkar Siddik, Prabir Kumar Haider, Prabir Garu, Snigdha Bhattacharjee, Ujjal Das, Arabinda Barman, Sim Roy, Pranab Kumar Sarkar
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2020)
Article
Nanoscience & Nanotechnology
Ujjal Das, Dip Das, Bappi Paul, Tridip Rabha, Soumya Pattanayak, Aloke Kanjilal, Snigdha Bhattacharjee, Pranab Sarkar, Asim Roy
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Nanoscience & Nanotechnology
Biswajit Das, Madhupriya Samanta, Pranab Sarkar, Uttam K. Ghorai, Abhijit Mallik, Kalyan K. Chattopadhyay
Summary: In this study, a one-dimensional nanotubular organic semiconductor, copper (II) phthalocyanine (CuPc), embedded in poly-methyl methacrylate (PMMA) was utilized for multilevel resistive switching (RS) and neuromorphic applications. The device demonstrated a large resistance ON/OFF ratio, low threshold operating voltage, large endurance, and long retention time. The conduction mechanism under optical and electrical impulse was attributed to charge trapping and detrapping methods, showing potential for future artificial neural systems.
ADVANCED ELECTRONIC MATERIALS
(2021)
Article
Physics, Applied
Ujjal Das, Pranab Sarkar, Bappi Paul, Asim Roy
Summary: The study presented a two-terminal artificial synapse based on organic-inorganic hybrid perovskite, which can emulate important synaptic characteristics including analog memory switching, short-term plasticity, and long-term plasticity. The device modifies synaptic plasticity through voltage pulses and light illumination, achieving emulation of synaptic functions.
APPLIED PHYSICS LETTERS
(2021)
Article
Chemistry, Physical
Ujjal Das, Anurag Dehingia, Bappi Paul, Pranab Kumar Sarkar, Asim Roy
Summary: The study focuses on the synthesis of all-inorganic RbPbI3 perovskite nanorods and investigates the impact of chloride doping on resistive switching applications. Devices with chloride-doped RbPbI3 in PMMA exhibit more prominent RS behavior, highlighting the importance of appropriate doping concentration for improved device performance.
JOURNAL OF PHYSICAL CHEMISTRY C
(2021)
Article
Chemistry, Inorganic & Nuclear
Tufan Paul, Pranab Kumar Sarkar, Soumen Maiti, Aditi Sahoo, Kalyan Kumar Chattopadhyay
Summary: Despite recent advancements, the quest for building materials with low power consumption in memory devices continues. This study explores the use of halide perovskites as a switching layer in memory devices, specifically focusing on the CsPb2Br5 film. The device exhibits pronounced bipolar resistive switching and shows promising features such as uniform switching, high endurance, and long retention time. Additionally, the device maintains its performance even under bending conditions.
DALTON TRANSACTIONS
(2022)
Review
Engineering, Electrical & Electronic
Abubakkar Siddik, Pranab Kumar Sarkar, Prabir Kumar Haldar
Summary: Nonvolatile resistive random-access memory devices, especially those based on halide perovskite materials, are considered as potential candidates for future-generation memory technology due to their fast switching operation, low power consumption, and multibit storage capability. Although significant progress has been made, the analysis of halide perovskites as switching materials for RRAM devices is still in the early research stages.
JOURNAL OF ELECTRONIC MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Ujjal Das, Pranab Kumar Sarkar, Dip Das, Bappi Paul, Asim Roy
Summary: The fabrication of perovskite-type rubidium lead chloride quantum dots is reported as a functional layer in a memristive system. The device exhibits reproducible bipolar switching behavior and demonstrates essential synaptic functions.
ADVANCED ELECTRONIC MATERIALS
(2022)
Article
Nanoscience & Nanotechnology
Arabinda Barman, Dip Das, Sujit Deshmukh, Pranab Kumar Sarkar, Debosmita Banerjee, Rene Hubner, Mukul Gupta, Chetan Prakash Saini, Shammi Kumar, Priya Johari, Sankar Dhar, Aloke Kanjilal
Summary: This study investigates the effect of cationic dopants on metal oxide-based memory devices and demonstrates that rational designing of RS memory devices with cationic dopants can lead to excellent resistive switching performance. Experimental analyses and calculations reveal the crucial role of V-o configurations and columnar-like dendritic structures in achieving ultralow-voltage bipolar RS characteristics.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
Abubakkar Siddik, Prabir Kumar Haldar, Ujjal Das, Asim Roy, Pranab Kumar Sarkar
Summary: In this study, we present the performance of a multilevel resistive switching memory device based on an Al/FAPbBr(3)/ITO structure. The device exhibits bipolar RS behavior with excellent electrical characteristics such as no forming process, low operating voltages, low power consumption, good stability, and a high ON/OFF ratio. The device also shows multilevel cell capability achieved through precise control of compliance current and stopping voltage. Furthermore, the memory performance of the device under various bending conditions confirms its mechanical robustness and stability, making it suitable for flexible device applications. Additionally, the device exhibits photo response-ability, with the RS effect being enhanced by light irradiation. The growth and rupture of reproducible conducting filaments formed by halide vacancies and active Al atoms explain the intrinsic phenomena of the RS effect. This work provides a pathway for the development of next-generation low power consumption, light-assisted, flexible volatile memory devices using organic-inorganic hybrid perovskite nanocrystals.
MATERIALS CHEMISTRY AND PHYSICS
(2023)
Article
Nanoscience & Nanotechnology
Arabinda Barman, Dip Das, Sujit Deshmukh, Pranab Kumar Sarkar, Debosmita Banerjee, Rene Huebner, Mukul Gupta, Chetan Prakash Saini, Shammi Kumar, Priya Johari, Sankar Dhar, Aloke Kanjilal
Summary: By doping appropriate cationic dopants, metal oxide-based RS devices can achieve excellent performance with low current, long retention time, and endurance at ultralow voltage. The presence of Vo configurations and columnar-like dendritic structures is crucial for achieving these characteristics.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Materials Science, Multidisciplinary
D. Das, A. Barman, P. K. Sarkar, P. Rajput, S. N. Jha, R. Huebner, D. Kanjilal, P. Johari, A. Kanjilal
Summary: The advancement of memristor-based artificial synapse is crucial for progress in neuromorphic devices. By engineering metal oxide layers with metal dopants such as Ni, high ON/OFF ratio, data retention, and endurance capabilities were achieved. This novel approach shows promise for next-generation smart memory devices with ultra-low power consumption.
JOURNAL OF MATERIALS CHEMISTRY C
(2021)
Article
Chemistry, Multidisciplinary
Abubakkar Siddik, Prabir Kumar Haldar, Tufan Paul, Ujjal Das, Arabinda Barman, Asim Roy, Pranab Kumar Sarkar
Summary: In this study, environmentally friendly and uniform CsSnCl3 perovskite films were introduced as an active layer in flexible memristors, demonstrating excellent electrical properties. The mechanism of resistive switching involving the formation and rupture of Ag filaments in the CsSnCl3 layer was well explained, confirming the metallic nature of the conducting filament through temperature-dependent variations. Various pulse measurements were conducted to mimic basic synaptic functions, providing an opportunity for the development of next-generation flexible electronics based on lead-free halide perovskites.
Proceedings Paper
Physics, Condensed Matter
Ujjal Das, Tridip Rabha, Anurag Dehingia, Snigdha Bhattacharjee, Pranab Kumar Sarkar, Asim Roy
DAE SOLID STATE PHYSICS SYMPOSIUM 2019
(2020)
Article
Engineering, Electrical & Electronic
Tufan Paul, Pranab Kumar Sarkar, Soumen Maiti, Kalyan Kumar Chattopadhyay
ACS APPLIED ELECTRONIC MATERIALS
(2020)
