Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell

标题
Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell
作者
关键词
-
出版物
RSC Advances
Volume 8, Issue 32, Pages 17622-17628
出版商
Royal Society of Chemistry (RSC)
发表日期
2018-05-15
DOI
10.1039/c8ra03181a

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