Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell
出版年份 2018 全文链接
标题
Highly stable ITO/Zn2TiO4/Pt resistive random access memory and its application in two-bit-per-cell
作者
关键词
-
出版物
RSC Advances
Volume 8, Issue 32, Pages 17622-17628
出版商
Royal Society of Chemistry (RSC)
发表日期
2018-05-15
DOI
10.1039/c8ra03181a
参考文献
相关参考文献
注意:仅列出部分参考文献,下载原文获取全部文献信息。- Gate contact resistive random access memory in nano scaled FinFET logic technologies
- (2017) Meng-Yin Hsu et al. JAPANESE JOURNAL OF APPLIED PHYSICS
- Oxygen-doped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method
- (2016) Hee-Dong Kim et al. JOURNAL OF ALLOYS AND COMPOUNDS
- Resistive switching characteristics of Al/Si3N4/p-Si MIS-based resistive switching memory devices
- (2016) Hee-Dong Kim et al. JOURNAL OF THE KOREAN PHYSICAL SOCIETY
- Bipolar Resistive Switching Characteristics of TaO2 RRAM
- (2016) Wei-Kang Hsieh et al. Science of Advanced Materials
- Overview of Selector Devices for 3-D Stackable Cross Point RRAM Arrays
- (2016) Rakesh Aluguri et al. IEEE Journal of the Electron Devices Society
- Two-bit-per-cell resistive switching memory device with a Ti/MgZnO/Pt structure
- (2015) Wei-Kang Hsieh et al. RSC Advances
- Stabilization of Ni conductive filaments using NH3 plasma treatment for electrochemical metallization memory
- (2015) Jingyu Park et al. RSC Advances
- Facile Synthesis of Porous Zn2Ti3O8Nanorods for Photocatalytic Overall Water Splitting
- (2014) Yang Qu et al. ChemCatChem
- Effect of Electrode Materials on AlN-Based Bipolar and Complementary Resistive Switching
- (2013) Chao Chen et al. ACS Applied Materials & Interfaces
- Design and Optimization of Nonvolatile Multibit 1T1R Resistive RAM
- (2013) Mahmoud Zangeneh et al. IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS
- Resistive Switching and Magnetic Modulation in Cobalt-Doped ZnO
- (2012) Guang Chen et al. ADVANCED MATERIALS
- Conduction mechanism of resistive switching films in MgO memory devices
- (2012) Fu-Chien Chiu et al. JOURNAL OF APPLIED PHYSICS
- Low-power TiN/Al2O3/Pt resistive switching device with sub-20 μA switching current and gradual resistance modulation
- (2011) Yi Wu et al. JOURNAL OF APPLIED PHYSICS
- Developments in nanocrystal memory
- (2011) Ting-Chang Chang et al. Materials Today
- NiO Resistive Random Access Memory Nanocapacitor Array on Graphene
- (2010) Jong Yeog Son et al. ACS Nano
- Bipolar resistive switching in Cu/AlN/Pt nonvolatile memory device
- (2010) C. Chen et al. APPLIED PHYSICS LETTERS
- Nonpolar resistive switching in the Pt/MgO/Pt nonvolatile memory device
- (2010) Hsin-Hung Huang et al. APPLIED PHYSICS LETTERS
- $\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current
- (2010) Yi Wu et al. IEEE ELECTRON DEVICE LETTERS
- A low-temperature-grown TiO2-based device for the flexible stacked RRAM application
- (2010) Hu Young Jeong et al. NANOTECHNOLOGY
- Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures
- (2010) Yingtao Li et al. Physica Status Solidi-Rapid Research Letters
- Threshold field of phase change memory materials measured using phase change bridge devices
- (2009) Daniel Krebs et al. APPLIED PHYSICS LETTERS
- Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Submicron three-dimensional trenched electrodes and capacitors for DRAMs and FRAMs: Fabrication and electrical testing
- (2008) M. Miyake et al. JOURNAL OF APPLIED PHYSICS
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowAsk a Question. Answer a Question.
Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.
Get Started