$\hbox{Al}_{2}\hbox{O}_{3}$-Based RRAM Using Atomic Layer Deposition (ALD) With 1-$\mu\hbox{A}$ RESET Current

出版年份 2010 全文链接

标题

作者

关键词

出版物

Volume 31, Issue 12, Pages 1449-1451

出版商

Institute of Electrical and Electronics Engineers (IEEE)

发表日期

2010-10-20

DOI

10.1109/led.2010.2074177

参考文献

查看 3 条相关文献

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now