Systematic investigation of the growth rate of β-Ga2O3(010) by plasma-assisted molecular beam epitaxy

beta-Ga2O3(010) homo-epitaxial growth was performed by plasma-assisted molecular beam epitaxy. Under Ga-rich conditions and for growth temperatures above 650 degrees C, the growth rate was independent of the Ga/O ratio (>1). A high growth rate of 2.2 nm/min for beta-Ga2O3(010) was achieved by optimizing the O flux between 650 and 750 degrees C. Under Ga-rich conditions between growth temperatures of 500-900 degrees C, smooth surfaces with rms roughness below 1 nm were realized. We found that the slightly Ga-rich conditions between 650 and 750 degrees C were optimal for beta-Ga2O3(010) growth with a smooth surface and a high growth rate. (C) 2014 The Japan Society of Applied Physics