Origin of negative resistance in anion migration controlled resistive memory

Crystal that remembers: several ways to utilize nanocrystals in resistive switching memory

(2017) Writam Banerjee et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAM

(2017) Writam Banerjee et al.   Nanoscale

Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices

(2017) Writam Banerjee et al.   Nanoscale

Confining Cation Injection to Enhance CBRAM Performance by Nanopore Graphene Layer

(2017) Xiaolong Zhao et al.   Small

Complementary Switching in 3D Resistive Memory Array

(2017) Writam Banerjee et al.   Advanced Electronic Materials

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory

(2016) Sen Liu et al.   ADVANCED MATERIALS

Sub-10 nm low current resistive switching behavior in hafnium oxide stack

(2016) Y. Hou et al.   APPLIED PHYSICS LETTERS

Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

(2016) Wonjoo Kim et al.   Nanoscale

Super non-linear RRAM with ultra-low power for 3D vertical nano-crossbar arrays

(2016) Qing Luo et al.   Nanoscale

Bias-polarity-dependent resistance switching in W/SiO2/Pt and W/SiO2/Si/Pt structures

(2016) Hao Jiang et al.   Scientific Reports

Understanding the Dual Nature of the Filament Dissolution in Conductive Bridging Devices

(2015) Umberto Celano et al.   Journal of Physical Chemistry Letters

Atomic View of Filament Growth in Electrochemical Memristive Elements

(2015) Hangbing Lv et al.   Scientific Reports

Low-energy Resistive Random Access Memory Devices with No Need for a Compliance Current

(2015) Zedong Xu et al.   Scientific Reports

Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memory

(2015) Hangbing Lv et al.   Scientific Reports

A Review of Three-Dimensional Resistive Switching Cross-Bar Array Memories from the Integration and Materials Property Points of View

(2014) Jun Yeong Seok et al.   ADVANCED FUNCTIONAL MATERIALS

The Role of Ti Capping Layer in HfOx-Based RRAM Devices

(2014) Zheng Fang et al.   IEEE ELECTRON DEVICE LETTERS

Novel Defects-Trapping ${\rm TaO}_{\rm X}/{\rm HfO}_{\rm X}$ RRAM With Reliable Self-Compliance, High Nonlinearity, and Ultra-Low Current

(2014) Yu-Sheng Chen et al.   IEEE ELECTRON DEVICE LETTERS

Multilevel unipolar resistive switching with negative differential resistance effect in Ag/SiO2/Pt device

(2014) Haitao Sun et al.   JOURNAL OF APPLIED PHYSICS

Resistive Random Access Memory Enabled by Carbon Nanotube Crossbar Electrodes

(2013) Cheng-Lin Tsai et al.   ACS Nano

HfOx-Based Vertical Resistive Switching Random Access Memory Suitable for Bit-Cost-Effective Three-Dimensional Cross-Point Architecture

(2013) Shimeng Yu et al.   ACS Nano

Utilizing NDR effect to reduce switching threshold variations in memristive devices

(2013) Fabien Alibart et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM

(2013) Florian Lentz et al.   IEEE ELECTRON DEVICE LETTERS

Excellent Uniformity and Multilevel Operation in Formation-Free Low Power Resistive Switching Memory Using IrOx/AlOx/W Cross-Point

(2013) Writam Banerjee et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Oxide Heterostructure Resistive Memory

(2013) Yuchao Yang et al.   NANO LETTERS

Engineering nonlinearity into memristors for passive crossbar applications

(2012) J. Joshua Yang et al.   APPLIED PHYSICS LETTERS

Forming Kinetics in $\hbox{HfO}_{2}$ -Based RRAM Cells

(2012) Paolo Lorenzi et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

(2011) Matthew D. Pickett et al.   ADVANCED MATERIALS

Impact of Temperature on the Resistive Switching Behavior of Embedded $\hbox{HfO}_{2}$-Based RRAM Devices

(2011) Christian Walczyk et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Electrode dependence of filament formation in HfO2 resistive-switching memory

(2011) Kuan-Liang Lin et al.   JOURNAL OF APPLIED PHYSICS

Measuring the switching dynamics and energy efficiency of tantalum oxide memristors

(2011) John Paul Strachan et al.   NANOTECHNOLOGY

Electrochemical metallization memories—fundamentals, applications, prospects

(2011) Ilia Valov et al.   NANOTECHNOLOGY

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

(2011) Myoung-Jae Lee et al.   NATURE MATERIALS

Very High Room-Temperature Peak-to-Valley Current Ratio in Si Esaki Tunneling Diodes (March 2010)

(2010) Michael Oehme et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Si/SiGe Resonant Interband Tunneling Diodes Incorporating $\delta$-Doping Layers Grown by Chemical Vapor Deposition

(2009) Si-Young Park et al.   IEEE ELECTRON DEVICE LETTERS

Voltage-controlled negative resistance and electroluminescent spectra of Al–Al2O3–Au diodes

(2009) T. W. Hickmott   JOURNAL OF APPLIED PHYSICS