期刊
APPLIED PHYSICS LETTERS
卷 101, 期 3, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4733981
关键词
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资金
- National Research Foundation of Korea [2011-0004270]
- Center for Inorganic Photovoltaic Materials [2012-0001171]
- Korea government (MEST)
- Korea University
- LG Innotek-Korea University
- Office of Naval Research
- DTRA
- NSF
We report that the oxidation of graphene-based highly transparent conductive layers to AlGaN/GaN/AlGaN ultra-violet (UV) light-emitting diodes (LEDs) was suppressed by the use of SiNX passivation layers. Although graphene is considered to be an ideal candidate as the transparent conductive layer to UV-LEDs, oxidation of these layers at high operating temperatures has been an issue. The oxidation is initiated at the un-saturated carbon atoms at the edges of the graphene and reduces the UV light intensity and degrades the current-voltage (I-V) characteristics. The oxidation also can occur at defects, including vacancies. However, GaN-based UV-LEDs deposited with SiNX by plasma-enhanced chemical vapor deposition showed minimal degradation of light output intensity and I-V characteristics because the graphene-based UV transparent conductive layers were shielded from the oxygen molecules. This is a simple and effective approach for maintaining the advantages of graphene conducting layers as electrodes on UV-LEDs. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4733981]
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