282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

Near milliwatt power AlGaN-based ultraviolet light emitting diodes based on lateral epitaxial overgrowth of AlN on Si(111)

(2013) Yinjun Zhang et al.   APPLIED PHYSICS LETTERS

AlGaN Deep-Ultraviolet Light-Emitting Diodes with External Quantum Efficiency above 10%

(2012) Max Shatalov et al.   Applied Physics Express

Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells

(2011) Kazuhito Ban et al.   Applied Physics Express

276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes

(2011) Seongmo Hwang et al.   Applied Physics Express

AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates

(2011) Myunghee Kim et al.   Applied Physics Express

Advances in group III-nitride-based deep UV light-emitting diode technology

(2010) M Kneissl et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

(2009) Chia-Hua Chan et al.   APPLIED PHYSICS LETTERS

Deep-Ultraviolet Light-Emitting Diodes

(2009) Michael S. Shur et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Pseudomorphic growth of thick n-type AlxGa1−xN layers on low-defect-density bulk AlN substrates for UV LED applications

(2009) J.R. Grandusky et al.   JOURNAL OF CRYSTAL GROWTH

Migration enhanced lateral epitaxial overgrowth of AlN and AlGaN for high reliability deep ultraviolet light emitting diodes

(2008) R. Jain et al.   APPLIED PHYSICS LETTERS