期刊
NANOTECHNOLOGY
卷 24, 期 7, 页码 -出版社
IOP PUBLISHING LTD
DOI: 10.1088/0957-4484/24/7/075202
关键词
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资金
- Creative Research Program of the ETRI of Korea [12ZF1110]
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science and Technology of Korea [2011-0031660]
- Global Frontier Research Program of MEST [2011-0031640]
- KINC-GRC Research Fund
- Ministry of Science, ICT & Future Planning, Republic of Korea [KINC01] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Council of Science & Technology (NST), Republic of Korea [12ZF1110] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
- National Research Foundation of Korea [2011-0031660, 2011-0031640] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We report an improvement of the optical power and thermal stability of GaN LEDs using a chemically doped graphene transparent conducting layer (TCL) and a low-resistance contact structure. In order to obtain low contact resistance between the TCL and p-GaN surface, a patterned graphene TCL with Cr/Au electrodes is suggested. A bi-layer patterning method of a graphene TCL was utilized to prevent the graphene from peeling off the p-GaN surface. To improve the work function and the sheet resistance of graphene, CVD (chemical vapor deposition) graphene was doped by a chemical treatment using a HNO3 solution. The effect of the contact resistance on the power degradation of LEDs at a high injection current level was investigated. In addition, the enhancement of the optical power via an increase in the current spreading and a decrease in the potential barrier of the graphene TCL was investigated.
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