Control of O-H bonds at a-IGZO/SiO2 interface by long time thermal annealing for highly stable oxide TFT

Comparative Studies of Long-Term Ambiance and Electrical Stress Stability of IGZO Thin-Film Transistors Annealed Under Hydrogen and Nitrogen Ambiance

(2016) Se-I Oh et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Reliability Improvement of Amorphous InGaZnO Thin-Film Transistors by Less Hydroxyl-Groups Siloxane Passivation

(2016) Chaiyanan Kulchaisit et al.   Journal of Display Technology

Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

(2015) Jae Gwang Um et al.   JOURNAL OF APPLIED PHYSICS

Remarkable changes in interface O vacancy and metal-oxide bonds in amorphous indium-gallium-zinc-oxide thin-film transistors by long time annealing at 250 °C

(2014) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

High current stress effects in amorphous-InGaZnO4 thin-film transistors

(2013) Mallory Mativenga et al.   APPLIED PHYSICS LETTERS

Temperature dependence of negative bias under illumination stress and recovery in amorphous indium gallium zinc oxide thin film transistors

(2013) Md Delwar Hossain Chowdhury et al.   APPLIED PHYSICS LETTERS

Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors

(2013) Hyeon-Kyun Noh et al.   JOURNAL OF APPLIED PHYSICS

Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances

(2012) E. Fortunato et al.   ADVANCED MATERIALS

Light/negative bias stress instabilities in indium gallium zinc oxide thin film transistors explained by creation of a double donor

(2012) Piero Migliorato et al.   APPLIED PHYSICS LETTERS

Edge Effects in Bottom-Gate Inverted Staggered Thin-Film Transistors

(2012) Mallory Mativenga et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Characteristics of short-channel amorphous In-Ga-Zn-O thin film transistors and their circuit performance as a load inverter

(2012) Jin-Seong Park   JOURNAL OF ELECTROCERAMICS

Effects of Diffusion of Hydrogen and Oxygen on Electrical Properties of Amorphous Oxide Semiconductor, In-Ga-Zn-O

(2012) Kenji Nomura et al.   ECS Journal of Solid State Science and Technology

Origin of threshold voltage shift by interfacial trap density in amorphous InGaZnO thin film transistor under temperature induced stress

(2011) Bosul Kim et al.   APPLIED PHYSICS LETTERS

Short channel device performance of amorphous InGaZnO thin film transistor

(2011) Sanghun Jeon et al.   APPLIED PHYSICS LETTERS

Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors

(2011) Kwang Hwan Ji et al.   APPLIED PHYSICS LETTERS

Present status of amorphous In–Ga–Zn–O thin-film transistors

(2010) Toshio Kamiya et al.   SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS

Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator

(2009) Yeon-Keon Moon et al.   APPLIED PHYSICS LETTERS

Origins of threshold voltage shifts in room-temperature deposited and annealed a-In–Ga–Zn–O thin-film transistors

(2009) Kenji Nomura et al.   APPLIED PHYSICS LETTERS

Gate-bias stress in amorphous oxide semiconductors thin-film transistors

(2009) M. E. Lopes et al.   APPLIED PHYSICS LETTERS

Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping

(2009) T. Kamiya et al.   Journal of Display Technology