Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator

标题
Improvement in the bias stability of amorphous indium gallium zinc oxide thin-film transistors using an O2 plasma-treated insulator
作者
关键词
-
出版物
APPLIED PHYSICS LETTERS
Volume 95, Issue 1, Pages 013507
出版商
AIP Publishing
发表日期
2009-07-09
DOI
10.1063/1.3167816

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