The Investigation of Current-Conduction Mechanisms of Te/NaF:CdS/SnO2 Structure in Wide Temperature Range of 80–400 K

Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

(2016) Çiğdem Ş. Güçlü et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Temperature dependence of characteristic parameters of the Au/C20H12/n-Si Schottky barrier diodes (SBDs) in the wide temperature range

(2016) K. Moraki et al.   JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

Electronic transport of Au/(Ca1.9Pr0.1Co4Ox)/n-Si structures analysed over a wide temperature range

(2015) S. Alialy et al.   PHILOSOPHICAL MAGAZINE

Temperature dependence of forward and reverse bias current–voltage characteristics in Al–TiW–PtSi/n-Si Schottky barrier diodes with the amorphous diffusion barrier

(2012) I.M. Afandiyeva et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Schottky diode properties of CuInSe2 films prepared by a two-step growth technique

(2012) H. Tecimer et al.   SENSORS AND ACTUATORS A-PHYSICAL

On the mechanism of current-transport in Cu/CdS/SnO2/In–Ga structures

(2011) Habibe Uslu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Temperature dependent current–voltage (I–V) characteristics of Au/n-Si (111) Schottky barrier diodes with PVA(Ni,Zn-doped) interfacial layer

(2011) Tuncay Tunç et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Effect of NaF on optical and structural properties of CdxZn1−xS nano crystalline films

(2011) Ayush Khare et al.   OPTIK

The explanation of barrier height inhomogeneities in Au/n-Si Schottky barrier diodes with organic thin interfacial layer

(2010) İlke Taşçıoğlu et al.   JOURNAL OF APPLIED PHYSICS

Fabrication of pentanary Cu(InGa)(SeS)2 absorbers by selenization and sulfurization

(2009) Yuri Goushi et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

The double Gaussian distribution of barrier heights in Al/TiO2/p-Si (metal-insulator-semiconductor) structures at low temperatures

(2008) O. Pakma et al.   JOURNAL OF APPLIED PHYSICS