Double exponential I–V characteristics and double Gaussian distribution of barrier heights in (Au/Ti)/Al2O3/n-GaAs (MIS)-type Schottky barrier diodes in wide temperature range

Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes

(2016) Matthew A. Laurent et al.   JOURNAL OF APPLIED PHYSICS

Analysis of temperature-dependant current–voltage characteristics and extraction of series resistance in Pd/ZnO Schottky barrier diodes

(2016) M A Mayimele et al.   PHYSICA B-CONDENSED MATTER

Temperature dependent of electrical characteristics of Au/n-GaAs/In Schottky diode with In 2 S 3 interfacial layer obtained by using spray pyrolysis method

(2015) Tuba Çakıcı et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Barrier inhomogeneities and electronic transport of Pt contacts to relatively highly doped n-type 4H-SiC

(2015) Lingqin Huang et al.   JOURNAL OF APPLIED PHYSICS

On the temperature dependent forward bias current–voltage (I–V) characteristics in Au/2% graphene–cobalt doped (Ca3Co4Ga0.001Ox)/n-Si structure

(2015) E. Marıl et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Electrical Characteristics of an Ag/n-InP Schottky Diode Based on Temperature-Dependent Current–Voltage and Capacitance–Voltage Measurements

(2015) Murat Gülnahar   METALLURGICAL AND MATERIALS TRANSACTIONS A-PHYSICAL METALLURGY AND MATERIALS SCIENCE

Capacitance–conductance characteristics of Au/Ti/Al2O3/n-GaAs structures with very thin Al2O3interfacial layer

(2015) A Turut et al.   Materials Research Express

Temperature-dependent electrical properties for graphene Schottky contact on n-type Si with and without sulfide treatment

(2014) Yow-Jon Lin et al.   APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING

Double Gaussian Distribution of Barrier Heights, Interface States, and Current Transport Mechanisms in Au/Bi0.5Na0.5TiO3-BaTiO3/n-GaN MIS Structure

(2014) V. Rajagopal Reddy et al.   JOURNAL OF ELECTRONIC MATERIALS

Electrical properties and the double Gaussian distribution of inhomogeneous barrier heights in Se/n-GaN Schottky barrier diode

(2014) V. Rajagopal Reddy et al.   SUPERLATTICES AND MICROSTRUCTURES

Temperature dependent current-transport mechanism in Au/(Zn-doped)PVA/n-GaAs Schottky barrier diodes (SBDs)

(2013) H. Tecimer et al.   SENSORS AND ACTUATORS A-PHYSICAL

A detailed study on current–voltage characteristics of Au/n-GaAs in wide temperature range

(2013) E. Özavcı et al.   SENSORS AND ACTUATORS A-PHYSICAL

Two diodes model and illumination effect on the forward and reverse bias I–V and C–V characteristics of Au/PVA (Bi-doped)/n-Si photodiode at room temperature

(2012) S. Demirezen et al.   CURRENT APPLIED PHYSICS

Evaluation of lateral barrier height of inhomogeneous photolithography-fabricated Au/n-GaAs Schottky barrier diodes from 80K to 320K

(2012) D. Korucu et al.   MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

Electrical transport properties of Au/SiO2/n-GaN MIS structure in a wide temperature range

(2011) B. Prasanna Lakshmi et al.   CURRENT APPLIED PHYSICS

Temperature dependent current–voltage and capacitance–voltage characteristics of chromium Schottky contacts formed by electrodeposition technique on n-type Si

(2011) Ö. Demircioglu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

Electrical transport characteristics of Ni/Pd/n-GaN Schottky barrier diodes as a function of temperature

(2011) M. Siva Pratap Reddy et al.   THIN SOLID FILMS

Possible current-transport mechanisms in the (Ni/Au)/Al0.22Ga0.78N/AlN/GaN Schottky barrier diodes at the wide temperature range

(2010) S. Demirezen et al.   CURRENT APPLIED PHYSICS

Analysis of barrier height inhomogeneity in Au/n-GaAs Schottky barrier diodes by Tung model

(2010) Murat Soylu et al.   JOURNAL OF ALLOYS AND COMPOUNDS

I–V–T analysing an inhomogeneous Au/Poly(4-vinyl phenol)/p-Si structure with a double Gaussian distribution of barrier heights

(2010) Osman Pakma et al.   JOURNAL OF SOL-GEL SCIENCE AND TECHNOLOGY

The theoretical and experimental study on double-Gaussian distribution in inhomogeneous barrier-height Schottky contacts

(2010) Nezir Yıldırım et al.   MICROELECTRONIC ENGINEERING

A detailed study of current–voltage characteristics in Au/SiO2/n-GaAs in wide temperature range

(2009) H. Altuntaş et al.   MICROELECTRONICS RELIABILITY

Thermal annealing effects on I–V–T characteristics of sputtered Cr/n-GaAs diodes

(2009) H. Korkut et al.   PHYSICA B-CONDENSED MATTER

Electrical characterization of the polyaniline including boron/p-type silicon structure for optical sensor applications

(2008) Fahrettin Yakuphanoglu et al.   SYNTHETIC METALS